BUZ31HXKSA1

$0.75

Description：MOSFET N-CH 200V 14.5A TO220-3
Series：SIPMOS®
Mfr：Infineon Technologies
Package：Tube,Tube

SKU:1915e40561eb Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 200V 14.5A TO220-3
Series：SIPMOS®
Mfr：Infineon Technologies
Package：Tube,Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：200 V
Current - Continuous Drain (Id) @ 25°C：14.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：5V
Rds On (Max) @ Id, Vgs：200mOhm @ 9A, 5V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1120 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：95W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：PG-TO220-3
Package / Case：TO-220-3

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BUZ31HXKSA1

Overview

The BUZ31HXKSA1 is an N-channel enhancement mode power MOSFET manufactured by Infineon Technologies. It utilizes SIPMOS technology and is housed in a PG-TO220-3 (TO-220AB) flange mount package with three pins. The device features a drain-source breakdown voltage of 200 V and supports a continuous drain current of 14.5 A at case temperature. Its maximum drain-source on-resistance is specified at 0.2 Ω. The component is avalanche rated with an energy capability of 200 mJ. It operates within a temperature range from -55 °C to +150 °C, with a total power dissipation of 95 W at case temperature.

Feature Summary

N-channel enhancement mode construction using SIPMOS technology
Avalanche rated design for robust operation under transient conditions
Single configuration with built-in diode structure
Through-hole mounting via flange mount TO-220-3 package

Applications

General purpose switching applications
Industrial control systems
Power supply circuits

Procurement Notes

Verify the specific suffix HXKSA1 against official Infineon documentation to confirm exact manufacturing lot and compliance details. Ensure the ordering part number matches the required package variant and thermal characteristics. Confirm RoHS compliance status through the manufacturer's current product status reports before finalizing procurement specifications.

Selection Notes

Select this component for designs requiring a 200 V N-channel MOSFET with moderate current handling capabilities. The TO-220-3 package facilitates effective heat dissipation for applications generating up to 95 W of power loss under controlled thermal conditions. Consider the 0.2 Ω on-resistance when calculating conduction losses in low-to-medium frequency switching environments.

Part Context

This component belongs to the BUZ31 series of power transistors from Infineon Technologies. The series represents standard N-channel enhancement mode devices designed for general-purpose power switching. The BUZ31HXKSA1 variant specifically denotes the packaged version suitable for through-hole assembly, maintaining the electrical characteristics defined in the core BUZ31 datasheet.