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Product Detailed Parameters
- Description：MOSFET N-CH 200V 13.5A TO220-3
- Series：SIPMOS®
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：200 V
- Current - Continuous Drain (Id) @ 25°C：13.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：5V
- Rds On (Max) @ Id, Vgs：200mOhm @ 7A, 5V
- Vgs(th) (Max) @ Id：2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1600 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：95W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：PG-TO220-3-1
- Package / Case：TO-220-3
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Overview
The BUZ31L E3044A is an N-Channel power MOSFET from Infineon Technologies, part of the SIPMOS series. It features a 200 V drain-source voltage rating and supports a continuous drain current of 13.5 A at case temperature. The device is housed in a PG-TO220-3-1 through-hole package, suitable for high-power applications. It dissipates up to 95 W of power under specified thermal conditions. This component is designed for robust switching performance in demanding electronic circuits.
Feature Summary
- N-Channel enhancement mode operation
- High voltage blocking capability
- Through-hole mounting for thermal management
Applications
- DC-DC converters
- Motor drives
- Power switching circuits
Procurement Notes
Verify the exact datasheet version as product status may vary. Confirm RoHS compliance requirements with the supplier. Check for obsolete status notifications from Infineon. Ensure the TO-220-3 package matches your PCB footprint. Validate thermal resistance parameters for your specific heatsinking design before finalizing procurement.
Selection Notes
Select this component when a 200 V rating and 13.5 A current capacity are required. The TO-220 package offers reliable thermal dissipation for moderate power levels. Consider the SIPMOS technology for efficient switching. Ensure the application environment stays within the specified operating temperature range. Verify gate drive compatibility for optimal performance.
Part Context
This part belongs to Infineon's SIPMOS family, known for high reliability and efficiency. The BUZ31L variant specifically targets medium-power switching applications. It represents a standard solution for industrial and consumer electronics requiring robust N-Channel MOSFETs. The TO-220 form factor ensures ease of integration into traditional through-hole designs.
Replacement Considerations
Check for direct pin-compatible substitutes with similar voltage and current ratings. Verify thermal characteristics match the original design constraints. Ensure gate charge specifications are compatible with existing driver circuits. Consult Infineon documentation for recommended alternative parts if this model is discontinued.
