ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET N-CH 200V 13.5A TO220-3
- Series：SIPMOS®
- Mfr：Infineon Technologies
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：200 V
- Current - Continuous Drain (Id) @ 25°C：13.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：5V
- Rds On (Max) @ Id, Vgs：200mOhm @ 7A, 5V
- Vgs(th) (Max) @ Id：2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1600 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：95W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：PG-TO220-3
- Package / Case：TO-220-3
Download product information
Overview
The BUZ31L H is an N-channel enhancement mode power transistor from Infineon Technologies, utilizing SIPMOS technology. It features a maximum drain-source voltage of 200 V and a continuous drain current of 13.5 A at 28 °C case temperature. The device has a typical on-resistance of 0.16 Ω and a maximum of 0.2 Ω at VGS = 5 V and ID = 7 A. It supports a pulsed drain current of 54 A and dissipates up to 95 W at 25 °C. The component operates within a junction temperature range of -55 °C to +150 °C and is housed in a PG-TO220-3 package.
Feature Summary
- Enhancement mode operation with logic level gate drive capability
- Avalanche-rated for robust energy handling
- Integrated body diode with defined forward characteristics
Applications
- High-side switching applications
- Low-side switching applications
- General-purpose power switching
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to confirm exact packaging and tape-and-reel specifications. Ensure the requested part matches the PG-TO220-3 package type and lead-free status indicated in the datasheet. Confirm availability through authorized distribution channels as supply conditions may vary.
Selection Notes
Select this component for applications requiring 200 V blocking voltage and moderate current handling up to 13.5 A. Consider the thermal resistance values and safe operating area curves when designing heat dissipation solutions. Verify that the gate drive voltage meets the logic level requirements for optimal on-resistance performance.
Part Context
This device belongs to the BUZ31 series of SIPMOS power transistors. It is designed for general-purpose power switching applications where high reliability and avalanche ruggedness are required. The technology combines low on-resistance with fast switching capabilities suitable for various industrial and consumer electronics uses.
Replacement Considerations
Consult official replacement lists or cross-reference guides provided by Infineon Technologies for verified substitute part numbers. Do not assume compatibility based solely on pinout or voltage ratings without verifying electrical parameters and package dimensions.
