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Product Detailed Parameters
- Description：MOSFET N-CH 200V 9.5A TO220-3
- Series：SIPMOS®
- Mfr：Infineon Technologies
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：200 V
- Current - Continuous Drain (Id) @ 25°C：9.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：400mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：530 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：75W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：PG-TO220-3
- Package / Case：TO-220-3
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Overview
The BUZ32 is an N-channel, enhancement-mode power transistor from Infineon's SIPMOS family. It features a PG-TO-220-3 package with Pb-free construction. Key electrical parameters include a drain-source breakdown voltage (VDS) of 200 V and a continuous drain current (ID) of 9.5 A at TC = 29°C. The maximum on-resistance (RDS(on)) is 0.4 Ω at VGS = 10 V and ID = 6 A. It supports a pulsed drain current of 38 A and operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- Avalanche-rated capability for robust operation under inductive load switching conditions
- Enhancement mode design requiring positive gate-source voltage for conduction
- Lead-free packaging compliant with environmental standards
Applications
- General-purpose power switching applications
- Inductive load control circuits
- Power amplification stages
Procurement Notes
Verify the specific revision status against the latest official datasheet before integration. Confirm that the PG-TO-220-3 package dimensions match your PCB footprint requirements. Ensure thermal management solutions account for the specified thermal resistance values to maintain junction temperatures within the safe operating area during continuous operation.
Selection Notes
Select this component when a 200 V rating and approximately 10 A continuous current handling are required in a standard through-hole package. Consider the avalanche energy ratings if the application involves significant inductive kickback. Evaluate the thermal resistance characteristics against your system's cooling capabilities to ensure reliable performance across the full operating temperature range.
Part Context
This device belongs to Infineon's SIPMOS power transistor portfolio, designed for general-purpose high-voltage switching. It utilizes planar strip technology to achieve low on-resistance and fast switching speeds. The component is engineered for reliability in automotive and industrial environments where robustness against transient overvoltages is critical.
Replacement Considerations
Consult official Infineon documentation for qualified alternative part numbers within the SIPMOS family or equivalent specifications from other manufacturers. Verify pinout compatibility and thermal characteristics when substituting.
