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Product Detailed Parameters
- Description：N-CHANNEL POWER MOSFET
- Series：-
- Mfr：Infineon Technologies
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
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Overview
The BUZ323 is a single N-channel power MOSFET manufactured by Infineon Technologies. It utilizes SIPMOS technology and is housed in the TO-218AA (PTO218-31) package. The device supports a maximum drain-source voltage of 400V and a continuous drain current of 15A. Key electrical parameters include an on-resistance of 300mΩ at 10V gate drive, a typical input capacitance of 180pF, and a total gate charge of 3nF. Thermal performance is rated for a power dissipation of 170W, with an operating junction temperature range spanning from -55°C to +150°C.
Feature Summary
- Utilizes Infineon's SIPMOS power transistor technology for robust industrial applications.
- Features a rugged TO-218AA package design suitable for demanding environments.
- Provides high-voltage switching capability with low on-state resistance.
Applications
- Industrial motor control systems
- High-voltage power switching circuits
- Rugged industrial equipment requiring reliable semiconductor components
Procurement Notes
Verify component authenticity through official Infineon channels or authorized distributors. Confirm that the specific part number matches the required specifications, as this component may have a discontinued lifecycle status. Ensure compatibility with existing thermal management solutions and circuit designs before procurement.
Selection Notes
Select this component when a 400V N-channel MOSFET with 15A current capacity is required. Consider the TO-218AA package for through-hole mounting needs. Evaluate the 300mΩ on-resistance against system efficiency requirements. Verify that the thermal characteristics align with the application's heat dissipation capabilities.
Part Context
The BUZ323 belongs to Infineon's portfolio of SIPMOS power transistors. These devices are designed for general-purpose power switching applications. The TO-218AA package provides mechanical stability and efficient heat transfer. This component represents a standard solution for medium-power industrial electronics.
Replacement Considerations
Public sources indicate the BUZ323 has an obsolete lifecycle status. Engineers should consult Infineon's official documentation for recommended replacement parts or equivalent series components that maintain similar electrical and mechanical specifications.
