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Product Detailed Parameters
- Description：N-CHANNEL POWER MOSFET
- Series：SIPMOS®
- Mfr：Infineon Technologies
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：200 V
- Current - Continuous Drain (Id) @ 25°C：9.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：400mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：530 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：75W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：PG-TO220-3
- Package / Case：TO-220-3
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Overview
The BUZ32HXKSA1 is a single N-channel Power MOSFET from Infineon Technologies, designed for high-efficiency switching applications. It features a low on-state resistance and robust avalanche capability, making it suitable for power management circuits. The component utilizes Infineon's HEXFET technology to ensure reliable performance under demanding electrical conditions.
Feature Summary
- Utilizes advanced HEXFET planar technology for optimized switching performance
- Designed with enhanced avalanche ruggedness for improved reliability in inductive load switching
- Engineered for low thermal resistance to facilitate efficient heat dissipation in compact layouts
Applications
- DC-DC converter modules
- Motor control circuits
- Power supply units
Procurement Notes
Verify the complete part number including the suffix KSA1 to ensure correct packaging and tape-and-reel specifications. Confirm that the requested quantity matches the standard reel size defined by the manufacturer. Cross-reference the date code and lot traceability requirements against your quality standards before finalizing the order.
Selection Notes
Select this component when a single N-channel MOSFET with specific voltage ratings and current handling capabilities is required. Ensure the operating temperature range aligns with the system environment. Verify that the gate charge characteristics meet the driving circuit constraints for optimal efficiency.
Part Context
This device belongs to the HEXFET family of power MOSFETs, known for their high density and fast switching speeds. It is part of Infineon's portfolio aimed at improving energy efficiency in various electronic systems. The package type provides mechanical stability and thermal performance suitable for surface mount assembly processes.
Replacement Considerations
Check pinout compatibility and electrical parameters such as Vds, Id, and Rds(on) when considering substitutes. Ensure the replacement device meets or exceeds the original specifications for voltage, current, and thermal performance. Verify package dimensions for mechanical fit.
