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Product Detailed Parameters
- Description：N-CHANNEL POWER MOSFET
- Series：-
- Mfr：Harris Corporation
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：50 V
- Current - Continuous Drain (Id) @ 25°C：14A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：100mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：650 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：40W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220-3
- Package / Case：TO-220-3
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Overview
BUZ71 is an N-channel enhancement mode power MOSFET manufactured by Harris Corporation. It features a silicon metal-oxide semiconductor construction housed in a TO-220AB flange mount package with three through-hole terminals. The device is designed for high-power switching applications, supporting a maximum drain current of 14A and a drain-source breakdown voltage of 50V. It exhibits a maximum on-resistance of 0.1 ohm and can dissipate up to 40W of power. The component operates in enhancement mode with a maximum junction temperature of 150°C.
Feature Summary
- N-channel enhancement mode operation for efficient switching control
- Robust TO-220AB flange mount packaging for effective thermal management
- High current handling capability suitable for power conversion circuits
Applications
- Switched mode power supplies
- Motor control systems
- DC-DC converters
- DC-AC converters
- General purpose switching applications
Procurement Notes
Verify the manufacturer origin carefully, as the BUZ71 part number was originally developed by Motorola and is widely produced by multiple vendors including STMicroelectronics and Intersil. Confirm that the specific unit matches the required electrical specifications, particularly the on-resistance and current ratings, as variations exist across different manufacturers. Ensure the package type corresponds to the intended PCB layout requirements.
Selection Notes
Select this component when designing circuits requiring an N-channel power MOSFET with moderate voltage ratings and high current capacity. The TO-220AB package facilitates direct mounting to heat sinks, making it suitable for applications where thermal dissipation is critical. Consider the 50V breakdown voltage limit when determining suitability for specific supply voltages and transient conditions.
Part Context
The BUZ71 belongs to the class of N-channel enhancement mode power MOS transistors. These devices are standard components in power electronics, utilized for their ability to handle significant power levels efficiently. The technology relies on silicon metal-oxide semiconductor structures to achieve low on-resistance and fast switching speeds, forming a foundational element in various industrial and consumer power conversion topologies.
Replacement Considerations
Direct substitutes include BUZ71D1, BUZ71A16, and BUZ71L from NXP/Motorola. Cross-manufacturer equivalents such as IRF830 or MTH40N06 may be considered if pin compatibility and electrical parameters align with the design requirements.
