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Product Detailed Parameters
- Description：MOSFET N-CH 200V 7A TO220-3
- Series：SIPMOS®
- Mfr：Infineon Technologies
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：200 V
- Current - Continuous Drain (Id) @ 25°C：7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：400mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：530 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：40W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：PG-TO220-3
- Package / Case：TO-220-3
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Overview
The BUZ73 is an N-channel enhancement mode SIPMOS power transistor manufactured by Infineon Technologies. It features a TO-220 package with a maximum drain-source voltage of 200 V and a continuous drain current of 7 A at 28 °C case temperature. The device has a maximum on-resistance of 0.4 Ω and supports a pulsed drain current of 28 A. Power dissipation reaches 40 W at 25 °C, with an operating junction temperature range from -55 °C to +150 °C. Key dynamic parameters include a turn-on delay time of 10 ns and a fall time of 30 ns.
Feature Summary
- Avalanche-rated capability for robust operation under inductive load switching conditions
- SIPMOS technology providing high reliability and low on-state resistance
- Enhancement mode N-channel configuration for standard gate drive compatibility
Applications
- High-voltage switching circuits requiring avalanche energy handling
- Power conversion systems utilizing TO-220 through-hole mounting
- Inductive load control applications
Procurement Notes
Verify the specific ordering code C67078-S1317-A2 against current Infineon catalogs to confirm availability and exact pinout alignment. Ensure thermal management designs account for the specified RthJA of 75 K/W when operating without forced cooling. Confirm that the 200 V rating meets system voltage requirements including transient spikes.
Selection Notes
Select this component for applications demanding a 200 V breakdown voltage and 7 A continuous current capacity in a standard TO-220 footprint. Consider the 0.4 Ω maximum RDS(on) for conduction loss calculations at 4.5 A. Evaluate the avalanche energy rating of 6.5 mJ if the circuit involves unclamped inductive switching scenarios.
Part Context
The BUZ73 belongs to the SIPMOS family of power transistors from Infineon Technologies. This series utilizes silicon planar gate technology optimized for high-voltage power switching applications. The component represents a discrete solution for medium-power electronics where ruggedness and proven silicon performance are prioritized over integrated smart features.
Replacement Considerations
Cross-reference with other N-channel MOSFETs rated for 200 V and 7 A in TO-220 packages. Verify pinout compatibility (Gate-Drain-Source) before substitution. Check if alternative devices offer lower RDS(on) or improved thermal characteristics while maintaining the same voltage and current ratings.
