BUZ73A

$0.45

Description：MOSFET N-CH 200V 5.5A TO220-3
Series：SIPMOS®
Mfr：Infineon Technologies
Package：Tube

SKU:0dbda5b4b42a Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 200V 5.5A TO220-3
Series：SIPMOS®
Mfr：Infineon Technologies
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：200 V
Current - Continuous Drain (Id) @ 25°C：5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：600mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：530 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：40W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：PG-TO220-3
Package / Case：TO-220-3

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BUZ73A

Overview

The BUZ73A is an N-channel power MOSFET from Infineon Technologies, part of the OptiMOS family. It features a silicon technology and is housed in a TO-220-3 through-hole package. Key electrical parameters include a drain-source breakdown voltage (Vds) of 200 V and a continuous drain current (Id) of 5.5 A at 25°C. The device exhibits a maximum on-resistance (Rds(on)) of 600 mΩ. It operates within a temperature range of -55°C to +150°C with a power dissipation capability of 40 W.

Feature Summary

N-channel configuration for single-channel switching applications
OptiMOS technology platform for optimized performance
Through-hole mounting via TO-220-3 package

Applications

General purpose power switching
DC-DC converter circuits
Motor control interfaces

Procurement Notes

Verify component authenticity and datasheet version before integration. Confirm RoHS compliance status and lead times with authorized distributors. Check for obsolescence notices as availability may vary by region.

Selection Notes

Select this component for low-voltage high-current applications requiring robust thermal performance. Ensure gate drive voltage remains within specified limits to maintain optimal Rds(on). Evaluate thermal management requirements given the 40 W dissipation rating.

Part Context

This device belongs to the BUZ73 series of power MOSFETs. It serves as a discrete semiconductor solution for medium-power electronics. The OptiMOS branding indicates specific process optimizations for efficiency and switching characteristics compared to standard MOSFETs.