BUZ73L

$0.49

Description：MOSFET N-CH 200V 7A TO220-3
Series：SIPMOS®
Mfr：Infineon Technologies
Package：Tube

SKU:85d443c44516 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 200V 7A TO220-3
Series：SIPMOS®
Mfr：Infineon Technologies
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：200 V
Current - Continuous Drain (Id) @ 25°C：7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：5V
Rds On (Max) @ Id, Vgs：400mOhm @ 3.5A, 5V
Vgs(th) (Max) @ Id：2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：840 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：40W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：PG-TO220-3
Package / Case：TO-220-3

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BUZ73L

Overview

The BUZ73L is an N-channel enhancement mode SIPMOS power transistor in a PG-TO220-3 package. It features a drain-source breakdown voltage of 200 V and a continuous drain current of 7 A at 28 °C. The maximum on-resistance is 0.4 Ω at VGS = 5 V and ID = 3.5 A. Power dissipation reaches 40 W at 25 °C case temperature. The device supports pulsed drain currents up to 28 A and operates within a junction temperature range of -55 °C to +150 °C.

Feature Summary

Logic level gate drive capability for direct interface with standard logic circuits
Avalanche-rated construction supporting energy absorption during switching transients
Integrated body diode with defined reverse recovery characteristics

Applications

High-side and low-side switching applications
DC-DC converter topologies
Motor control circuits

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm pinout orientation and RoHS compliance status. Confirm that the component matches the PG-TO220-3 physical footprint requirements for your printed circuit board design before finalizing procurement.

Selection Notes

Select this component when a 200 V rating and 7 A continuous current capacity are required in a through-hole package. The logic-level threshold allows operation with 5 V gate drive signals, simplifying driver selection compared to standard threshold devices.

Part Context

This part belongs to Infineon's SIPMOS family of silicon power transistors. These components utilize planar trench technology to achieve low on-resistance and high reliability. The BUZ73 series represents a standard lineup of general-purpose N-channel MOSFETs designed for robust industrial and commercial power switching environments.

Replacement Considerations

Check datasheets for alternative parts offering identical 200 V / 7 A ratings and PG-TO220-3 packaging. Ensure replacement devices match the 0.4 Ω maximum RDS(on) specification and logic-level gate threshold requirements to maintain circuit performance.