ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET N-CH 200V 7A TO220-3
- Series：SIPMOS®
- Mfr：Infineon Technologies
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：200 V
- Current - Continuous Drain (Id) @ 25°C：7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：5V
- Rds On (Max) @ Id, Vgs：400mOhm @ 3.5A, 5V
- Vgs(th) (Max) @ Id：2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：840 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：40W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：PG-TO220-3
- Package / Case：TO-220-3
Download product information
Overview
The BUZ73LHXKSA1 is an N-channel enhancement mode MOSFET manufactured by Infineon Technologies. It features a maximum drain-source voltage of 200 V and a continuous drain current of 7 A. The device utilizes a TO-220 package for through-hole mounting, offering a maximum power dissipation of 40 W. Key electrical characteristics include a maximum on-resistance of 400 mΩ and a gate-source voltage range of -20 V to +20 V. It operates within a temperature range of -55 °C to +150 °C.
Feature Summary
- N-channel enhancement mode operation
- Through-hole TO-220 packaging
- High thermal stability up to 150 °C
Applications
- Industrial switched-mode power supplies
- General-purpose switching applications
- Low-voltage DC-DC converter circuits
Procurement Notes
Verify the specific suffix 'HXKSA1' against official Infineon documentation to confirm exact tape-and-reel specifications or regional compliance markings. Ensure the ordering part number matches the required package variant and marking code before procurement.
Selection Notes
Select this component for designs requiring robust through-hole mounting with moderate current handling capabilities. The 200 V rating suits low-voltage isolation requirements, while the 400 mΩ resistance balances conduction losses for general-purpose switching tasks.
Part Context
This part belongs to Infineon's discrete power MOSFET portfolio, designed for cost-effective solutions in industrial and consumer electronics. It complements broader power management strategies by providing reliable switching performance in standard through-hole configurations.
Replacement Considerations
Consult official cross-reference guides for equivalent N-channel MOSFETs with matching 200 V ratings and TO-220 packages. Verify pinout compatibility and thermal characteristics before substituting.
