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Product Detailed Parameters
- Description：N-CHANNEL POWER MOSFET
- Series：-
- Mfr：Harris Corporation
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：400 V
- Current - Continuous Drain (Id) @ 25°C：2.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：2.5Ohm @ 1.5A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：500 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：40W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220-3
- Package / Case：TO-220-3
Download product information
Overview
The BUZ76A is an N-channel power MOSFET manufactured by Harris Corporation. It features a TO-220-3 through-hole package designed for high-voltage applications. Key electrical parameters include a drain-source voltage of 400 V and a continuous drain current of 2.6 A at case temperature. The device supports a maximum power dissipation of 40 W under case cooling conditions. It operates within a junction temperature range of -55°C to 150°C.
Feature Summary
- N-channel silicon MOSFET construction
- High voltage capability up to 400 V
- Through-hole mounting in TO-220-3 package
Applications
- Industrial control systems
- DC motor drives
Procurement Notes
Verify the manufacturer designation, as Harris Corporation assets were acquired by L3Harris Technologies. Confirm the specific package variant (TO-220AB or TO-220-3) matches your board layout requirements. Ensure the component meets RoHS compliance standards if required by your assembly specifications. Cross-reference datasheets from authorized distributors to confirm active status and availability.
Selection Notes
Select this component for circuits requiring robust N-channel switching with moderate current handling capabilities. The TO-220-3 package facilitates efficient heat dissipation for power applications. Consider the 400 V rating when designing for higher voltage DC buses. Verify thermal management solutions align with the 40 W dissipation limit at case temperature.
Part Context
This part belongs to the family of single FETs and MOSFETs produced by Harris Corporation. It is categorized under discrete semiconductor products, specifically transistors. The component is widely distributed by electronic component suppliers such as DigiKey and Ersa Electronics. It serves as a standard solution for general-purpose power switching tasks.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Consult official L3Harris documentation for approved equivalents.
