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Product Detailed Parameters
- Description：MOSFET N-CH 800V 3.6A TO220AB
- Series：SIPMOS®
- Mfr：Infineon Technologies
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：800 V
- Current - Continuous Drain (Id) @ 25°C：3.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：3Ohm @ 2A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1350 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：100W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220AB
- Package / Case：TO-220-3
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Overview
The BUZ80A is an N-channel SIPMOS power transistor designed for high-voltage switching applications. It features a drain-source breakdown voltage of 800 V and a continuous drain current of 3.6 A at 25°C case temperature. The device exhibits a maximum static drain-source on-resistance of 3 Ω at VGS = 10 V. It supports pulsed drain currents up to 14.5 A and includes avalanche-rated capabilities with a single-pulse avalanche energy rating of 320 mJ. The component operates within a junction temperature range of -55 °C to +150 °C and utilizes a TO-220 AB package.
Feature Summary
- N-channel enhancement mode construction
- Avalanche-rated capability for robust operation
- High voltage blocking performance
Applications
- Motor drive circuits
- DC-DC converter topologies
- Power switch implementations
- Solenoid drive systems
Procurement Notes
Verify the specific manufacturer source, as multiple vendors produce this legacy part number. Confirm the package outline matches the required TO-220 AB footprint. Check datasheet revisions for any updates to thermal resistance or electrical limits. Ensure the ordering code aligns with the intended supplier's catalog structure before finalizing procurement.
Selection Notes
Select this component for applications requiring high voltage isolation and moderate current handling. Consider the thermal resistance characteristics when designing heat dissipation strategies. Evaluate the gate threshold voltage requirements against the control logic levels. Assess the avalanche energy ratings if inductive load switching is anticipated.
Part Context
This device belongs to the SIPMOS family of power transistors, representing Infineon Technologies' silicon planar MOS technology. It serves as a standard solution for general-purpose high-voltage switching tasks where cost-effectiveness and reliability are prioritized over ultra-low on-resistance.
Replacement Considerations
Direct substitutes include BUZ80 from Siemens Semiconductor Group. Verify pinout compatibility and electrical parameter equivalence before substitution.
