BVSS138LT1G

$0.22

Description：MOSFET N-CH 50V 200MA SOT23-3
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:1ea08db5a8c8 Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 50V 200MA SOT23-3
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：50 V
Current - Continuous Drain (Id) @ 25°C：200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：5V
Rds On (Max) @ Id, Vgs：3.5Ohm @ 200mA, 5V
Vgs(th) (Max) @ Id：1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：50 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：225mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3 (TO-236)
Package / Case：TO-236-3, SC-59, SOT-23-3

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BVSS138LT1G

Overview

The BVSS138LT1G is an N-channel enhancement mode MOSFET from the BSS138L series, manufactured by onsemi. It features a 50 V drain-to-source voltage rating and supports a continuous drain current of 200 mA at 25°C. The device utilizes a miniature SOT-23 surface-mount package with a maximum power dissipation of 225 mW. Key electrical characteristics include a gate-to-source voltage limit of ±20 V, a typical static drain-to-source on-resistance of 3.5 Ω at VGS = 5 V, and a low threshold voltage range of 0.85 V to 1.5 V. It operates within a junction temperature range of -55°C to +150°C.

Feature Summary

Low threshold voltage suitable for low-voltage applications
Miniature SOT-23 surface mount package design
Automotive qualification via AEC-Q101 standard
High electrostatic discharge protection capability

Applications

DC-DC converters
Power management in portable products
Battery-powered devices such as computers and printers
PCMCIA cards
Cellular and cordless telephones

Procurement Notes

Verify that the ordering suffix LT1G corresponds to the specific tape and reel packaging configuration required for your assembly line. Confirm that the BVSS prefix indicates compliance with unique site and control change requirements mandated by automotive or specialized industrial standards. Ensure the component meets RoHS and halogen-free material specifications before final integration into the production workflow.

Selection Notes

Select this component when a small form factor is critical for board space optimization in portable electronics. The low threshold voltage makes it appropriate for circuits requiring efficient switching at lower gate drive levels. Verify that the 200 mA continuous current rating aligns with the load requirements of the specific application circuit to ensure reliable operation under expected thermal conditions.

Part Context

This part belongs to the BSS138L family of N-channel MOSFETs produced by onsemi. The BVSS prefix distinguishes it as a variant designed for automotive and other applications requiring specific supply chain controls and quality assurance protocols. It shares core electrical parameters with the standard BSS138LT1G but adheres to stricter manufacturing site verification standards.

Replacement Considerations

The BSS138LT1G serves as a direct functional substitute for the BVSS138LT1G in general applications where automotive-specific supply chain controls are not mandatory. Both parts share identical pinouts and electrical ratings.