BVSS138LT3G

Description：MOSFET N-CH 50V 200MA SOT-23-3
Series：-
Mfr：onsemi
Package：Tape & Reel (TR)

SKU:9a9c16ccdd5f Category: Single FETs, MOSFETs Brand: onsemi

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 50V 200MA SOT-23-3
Series：-
Mfr：onsemi
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：50 V
Current - Continuous Drain (Id) @ 25°C：200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：3.5Ohm @ 200mA, 5V
Vgs(th) (Max) @ Id：1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：50 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：225mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3 (TO-236)
Package / Case：TO-236-3, SC-59, SOT-23-3

Download product information

BVSS138LT3G

Overview

The BVSS138LT3G is an N-channel enhancement mode Power MOSFET from the BSS138L/BVSS138L series, manufactured by onsemi. It features a 50 V drain-to-source voltage rating and a continuous drain current of 200 mA at 25°C. The device utilizes a miniature SOT-23 surface-mount package (CASE 318) with three pins. Key electrical parameters include a maximum static drain-to-source on-resistance of 3.5 Ω at VGS = 5.0 V and 200 mA, and a gate-source threshold voltage range of 0.85 V to 1.5 V. It operates within a junction temperature range of -55°C to +150°C.

Feature Summary

Low threshold voltage design suitable for low-voltage applications
Automotive qualified with AEC-Q101 certification and PPAP capability
Miniature SOT-23 surface mount package for board space savings

Applications

DC-DC converters
Power management in portable products
Battery-powered computers and printers
PCMCIA cards
Cellular and cordless telephones

Procurement Notes

Verify that the ordering suffix 'LT3G' corresponds to the specific tape and reel packaging quantity of 10,000 units as defined in the official datasheet. Confirm the 'BVSS' prefix indicates compliance with unique site and control change requirements for automotive applications. Ensure the component meets RoHS, Pb-Free, and Halogen-Free standards required for the target assembly process.

Selection Notes

Select this component when a small form factor N-channel MOSFET is required for low-current switching tasks. The low gate threshold voltage makes it appropriate for logic-level driving or battery-operated systems where minimizing gate drive power is necessary. Verify that the 200 mA continuous current limit and 3.5 Ω on-resistance meet the specific load requirements of the circuit design.

Part Context

This part belongs to the BSS138L/BVSS138L family of N-channel Power MOSFETs. The BVSS prefix distinguishes it from standard commercial variants by indicating qualification for automotive environments, including AEC-Q101 reliability testing and Production Part Approval Process (PPAP) readiness. It shares the same electrical characteristics as the BSS138L but adheres to stricter manufacturing controls.