BVSS84LT1G

$0.34

Description：MOSFET P-CH 50V 130MA SOT23-3
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:fda6abaeb8ff Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 50V 130MA SOT23-3
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：50 V
Current - Continuous Drain (Id) @ 25°C：130mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：5V
Rds On (Max) @ Id, Vgs：10Ohm @ 100mA, 5V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：2.2 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：36 pF @ 5 V
FET Feature：-
Power Dissipation (Max)：225mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3 (TO-236)
Package / Case：TO-236-3, SC-59, SOT-23-3

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BVSS84LT1G

Overview

BVSS84LT1G is a single P-Channel Power MOSFET manufactured by onsemi, housed in a SOT-23 surface-mount package. The device features a drain-to-source voltage rating of -50 Vdc and a continuous drain current of -130 mA at 25°C ambient temperature. It exhibits a maximum static drain-to-source on-resistance of 10 Ω at a gate-to-source voltage of -5.0 Vdc. The component operates within a junction temperature range of -55°C to +150°C and includes an integrated body diode with a forward voltage of up to 2.2 V at -130 mA.

Feature Summary

Automotive-grade qualification including AEC-Q101 certification and PPAP capability for unique site and control change requirements.
Compact SOT-23 surface-mount packaging designed to minimize printed circuit board space consumption.
Lead-free construction compliant with RoHS standards.

Applications

Automotive electronic circuits requiring qualified components.
General applications necessitating unique site and control change protocols.
Low-power switching functions utilizing the single P-Channel configuration.

Procurement Notes

Verify that the specific order contains the BV prefix to ensure AEC-Q101 qualification and PPAP capability are included. Confirm the suffix matches the required tape and reel specifications. Ensure the procurement documentation aligns with the lead soldering temperature limits and thermal resistance parameters defined in the datasheet maximum ratings.

Selection Notes

Select this component when automotive qualification or specific supply chain control changes are mandatory. The BV prefix distinguishes it from standard BSS84L variants regarding manufacturing site controls. Evaluate the 10 Ω on-resistance and -50 V breakdown voltage against circuit load requirements. Consider the SOT-23 package dimensions for spatial constraints in dense layouts.

Part Context

The BVSS84LT1G belongs to the BSS84L family of single P-Channel MOSFETs produced by onsemi. This series utilizes silicon technology within the SOT-23 (TO-236AB) case outline. The BV designation specifically denotes parts manufactured under stricter automotive quality management systems compared to non-BV counterparts.

Replacement Considerations

BSS84LT1G

FAQ

What does the BV prefix indicate for this component?

The BV prefix signifies that the device is AEC-Q101 qualified and PPAP capable, intended for automotive and other applications requiring unique site and control change requirements.