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Product Detailed Parameters
- Description：MOSFET P-CH 50V 130MA SOT-23-3
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：50 V
- Current - Continuous Drain (Id) @ 25°C：130mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：5V
- Rds On (Max) @ Id, Vgs：10Ohm @ 100mA, 5V
- Vgs(th) (Max) @ Id：2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：2.2 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：36 pF @ 5 V
- FET Feature：-
- Power Dissipation (Max)：225mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3 (TO-236)
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The BVSS84LT3G is a single P-channel power MOSFET manufactured by onsemi. It features a -50 V drain-source voltage rating and a continuous drain current of -10 A. The device is housed in an SOT-23 surface-mount package, designed for efficient switching applications requiring compact form factors.
Feature Summary
- Single P-channel configuration for simplified circuit design
- SOT-23 package for space-constrained PCB layouts
Applications
- Power management circuits
- Load switching applications
- Battery protection systems
Procurement Notes
Verify the complete part number including the suffix to ensure correct packaging specifications. Confirm RoHS compliance status through official manufacturer documentation before integration into production environments.
Selection Notes
Select this component for low-voltage DC-DC converters or load switches where a small footprint is critical. Ensure the thermal requirements of the SOT-23 package align with the expected power dissipation in the target application.
Part Context
This device belongs to onsemi's discrete power MOSFET portfolio, specifically targeting portable electronics and consumer devices. It complements broader power management solutions offered by the manufacturer for energy-efficient system designs.
