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Product Detailed Parameters
- Description：BXL4004 - N-CHANNEL POWER MOSFET
- Series：-
- Mfr：onsemi
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：100A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：3.9mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：140 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：8200 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：75W (Tc)
- Operating Temperature：150°C
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220-3
- Package / Case：TO-220-3
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Overview
The BXL4004-1E is an N-channel power MOSFET from onsemi, housed in a TO-220-3L package. It features a drain-to-source voltage (V_DSS) of 40 V and supports a continuous DC drain current (I_D) of 100 A at Tc=25°C. The device exhibits a typical static drain-to-source on-state resistance (R_DS(on)) of 3 mΩ at V_GS=10V and I_D=50A, with a maximum of 3.9 mΩ under the same conditions. At V_GS=4.5V, R_DS(on) ranges from 4.7 mΩ to 6.6 mΩ. Key electrical parameters include a gate threshold voltage (V_GS(off)) between 1.2 V and 2.6 V, input capacitance (C_iss) of 8200 pF, and total gate charge (Q_g) of 140 nC at V_DS=24V, V_GS=10V, and I_D=100A. The integrated body diode has a forward voltage (V_SD) of 1.0 V to 1.2 V at I_S=100A.
Feature Summary
- Low on-state resistance for efficient conduction
- High pulsed drain current capability
- Compatible with standard logic-level drive voltages
Applications
- DC-DC converter circuits
- Motor control systems
- Power switching applications
Procurement Notes
Verify the specific ordering suffix '-1E' against official documentation to confirm packaging details, such as the magazine quantity of 50 pcs. Ensure compliance requirements like Pb-free and Halogen-free status are validated through the manufacturer's latest material composition declarations before procurement.
Selection Notes
Select this component based on the required 40 V breakdown voltage and 100 A continuous current rating. Evaluate thermal management needs using the allowable power dissipation curves relative to case temperature. Confirm that the gate drive voltage meets the minimum threshold for the desired R_DS(on) performance level.
Part Context
This part belongs to the BXL4004 series of N-channel power MOSFETs manufactured by onsemi. It utilizes a planar trench technology design optimized for low on-resistance and fast switching speeds. The TO-220-3L package provides robust mechanical stability and thermal dissipation capabilities suitable for through-hole mounting.
Replacement Considerations
Consult official substitution guides or cross-reference tools provided by onsemi for verified alternatives. Do not assume compatibility based solely on similar pinouts or voltage ratings without verifying electrical characteristics and thermal performance.
