BXL4004-1EX

$1.14

Description：NCH 4.5V DRIVE SERIES
Series：*
Mfr：onsemi
Package：Bulk

SKU:25d8f65c38f9 Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：NCH 4.5V DRIVE SERIES
Series：*
Mfr：onsemi
Package：Bulk
FET Type：-
Technology：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：-
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：-
Supplier Device Package：-
Package / Case：-

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BXL4004-1EX

Overview

The BXL4004-1E is an N-channel power MOSFET from onsemi, housed in a TO-220-3L package. It features a drain-to-source voltage (V_DSS) of 40 V and a continuous drain current (I_D) of 100 A at Tc=25°C. The device exhibits a typical static drain-to-source on-state resistance (R_DS(on)) of 3 mΩ at V_GS=10V and 6.6 mΩ at V_GS=4.5V. Key electrical characteristics include a total gate charge (Q_g) of 140 nC, input capacitance (C_iss) of 8200 pF, and a forward transfer admittance (|y_fs|) of 120 S. It supports a pulsed drain current of 400 A and operates within a channel temperature range up to 150°C.

Feature Summary

Low on-state resistance for efficient power handling
High current capability with 100A continuous rating
Optimized for 4.5V drive applications
Robust avalanche energy handling

Applications

DC-DC converters
Motor control circuits
Power switching applications

Procurement Notes

Verify the specific ordering suffix '-1E' corresponds to the magazine packaging configuration as documented in the datasheet. Confirm that the component meets Pb-Free and Halogen-Free requirements if environmental compliance is mandatory for your assembly process. Ensure the TO-220-3L package dimensions align with your thermal management and PCB layout constraints before finalizing procurement.

Selection Notes

Select this component when a low-voltage, high-current N-channel MOSFET is required. The 40V rating suits low-side switching or synchronous rectification in 12V/24V systems. Consider the R_DS(on) values at both 10V and 4.5V gate drives to match your driver capabilities. The TO-220-3L package is suitable for through-hole mounting where higher thermal dissipation is needed compared to surface-mount options.

Part Context

The BXL4004 belongs to onsemi's discrete power MOSFET portfolio, designed for general-purpose power switching. It utilizes silicon technology optimized for low conduction losses. The TO-220-3L package provides a balance between thermal performance and mechanical robustness, making it a standard choice for industrial and consumer power electronics requiring reliable high-current operation.

Replacement Considerations

Direct substitutes must match the 40V V_DSS, 100A I_D, and TO-220-3L package. Verify pinout compatibility (Gate, Drain, Source). Check that alternative devices meet or exceed the R_DS(on) and Q_g specifications to ensure equivalent performance in existing circuit designs without requiring redesign.