BYG10MHE3_A/I

BYG10MHE3_A/I

$0.10
  • Description:DIODE AVALANCHE 1KV 1.5A DO214AC
  • Series:-
  • Mfr:Vishay General Semiconductor - Diodes Division
  • Package:Tape & Reel (TR)

SKU:f995b405996e Category: Brand:

  
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Product Detailed Parameters

  • Description:DIODE AVALANCHE 1KV 1.5A DO214AC
  • Series:-
  • Mfr:Vishay General Semiconductor - Diodes Division
  • Package:Tape & Reel (TR)
  • Technology:Avalanche
  • Voltage - DC Reverse (Vr) (Max):1000 V
  • Current - Average Rectified (Io):1.5A
  • Voltage - Forward (Vf) (Max) @ If:1.15 V @ 1.5 A
  • Speed:Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):4 µs
  • Current - Reverse Leakage @ Vr:1 µA @ 1000 V
  • Capacitance @ Vr, F:-
  • Mounting Type:Surface Mount
  • Package / Case:DO-214AC, SMA
  • Supplier Device Package:DO-214AC (SMA)
  • Operating Temperature - Junction:-55°C ~ 150°C
  • Grade:Automotive
  • Qualification:AEC-Q101

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BYG10MHE3_A/I

Overview

The BYG10MHE3_A/I is a standard avalanche surface-mount rectifier from Vishay General Semiconductor, housed in an SMA (DO-214AC) package. It features a maximum repetitive peak reverse voltage of 1000 V and an average forward current rating of 1.5 A. The device supports a peak forward surge current of 30 A and exhibits a maximum instantaneous forward voltage of 1.15 V at 1.5 A. Electrical characteristics include a maximum DC reverse current of 1.0 μA at 25 °C and a typical reverse recovery time of 4 μs. The component operates within a junction and storage temperature range of -55 to +150 °C.

Feature Summary

  • Controlled avalanche characteristics for robust performance under inductive load switching conditions
  • Glass passivated pellet chip junction ensuring low reverse leakage current
  • High surge current capability suitable for demanding power applications
  • Low profile package design optimized for automated placement processes

Applications

  • General purpose rectification in power supplies
  • Inverter circuits
  • Converter topologies
  • Freewheeling diodes for consumer, automotive, and telecommunication equipment

Procurement Notes

Verify the specific ordering code suffix against official documentation to confirm compliance with RoHS directives and AEC-Q101 automotive qualification standards. Ensure the selected packaging format matches the required delivery mode specifications provided by the manufacturer. Cross-reference technical parameters with the latest datasheet revision to validate suitability for the intended operational environment.

Selection Notes

Select this component when a 1000 V blocking capability is required in a compact SMA surface-mount footprint. The controlled avalanche rating makes it appropriate for circuits subject to inductive switching transients. Verify that the thermal resistance characteristics align with the system's heat dissipation requirements and ambient operating temperature constraints.

Part Context

This part belongs to the BYG10 series of standard avalanche SMD rectifiers manufactured by Vishay General Semiconductor. The series encompasses multiple voltage ratings ranging from 200 V to 1600 V within the same DO-214AC package family. The HE3 suffix indicates a lead-free, halogen-free variant that meets RoHS requirements and holds AEC-Q101 qualification for automotive reliability standards.

Replacement Considerations

Compatible substitutes within the same series include BYG10D, BYG10G, BYG10J, BYG10K, and BYG10Y, provided their respective voltage ratings meet or exceed the circuit requirements.

BYG10MHE3_A/IBYG10MHE3_A/I
$0.10
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