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The BYG22DHE3/TR is an ultrafast avalanche SMD rectifier from Vishay General Semiconductor, designed for high-frequency applications. It features a glass passivated pellet chip junction and operates in the DO-214AC (SMA) package. Key electrical parameters include a maximum repetitive peak reverse voltage of 200 V, an average forward current of 2.0 A, and a peak forward surge current of 35 A. The device exhibits a low forward voltage of 1.1 V at 2.0 A, a maximum reverse current of 1 µA, and an ultra-fast reverse recovery time of 25 ns. It supports a maximum junction temperature of 150 °C and is qualified to AEC-Q101 standards.
Verify that the ordering suffix /TR corresponds to the tape and reel delivery mode specified in the manufacturer's documentation. Confirm the base part number aligns with the HE3 designation for AEC-Q101 qualification. Ensure the specific voltage rating matches the D variant requirements for your circuit design before procurement.
Select this component when a fast recovery diode with avalanche capability is required in a compact SMA package. The 200 V rating suits medium voltage DC-DC conversion stages. Consider the thermal resistance values relative to your PCB copper area and ambient conditions to ensure safe operation within the 150 °C junction limit.
This device belongs to the BYG22 series of ultrafast avalanche rectifiers, which includes variants with different voltage ratings such as 50 V and 100 V. All members share the same physical package and general electrical characteristics, differing primarily in their maximum repetitive peak reverse voltage specifications. The series is optimized for efficiency in modern switching power topologies.
Direct substitutes within the same family include BYG22BHE3/TR for lower voltage applications or BYG22AHE3/TR for even lower voltage requirements. Cross-brand replacements must match the 2 A current rating, 200 V blocking voltage, and DO-214AC footprint while verifying reverse recovery time compatibility.