BYM13-30HE3_A/H

BYM13-30HE3_A/H

  • Description:DIODE SCHOTTKY 30V 1A DO213AB
  • Series:-
  • Mfr:Vishay General Semiconductor - Diodes Division
  • Package:Tape & Reel (TR)

SKU:1ab991f1bbd4 Category: Brand:

ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:DIODE SCHOTTKY 30V 1A DO213AB
  • Series:-
  • Mfr:Vishay General Semiconductor - Diodes Division
  • Package:Tape & Reel (TR)
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):30 V
  • Current - Average Rectified (Io):1A
  • Voltage - Forward (Vf) (Max) @ If:500 mV @ 1 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:500 µA @ 30 V
  • Capacitance @ Vr, F:110pF @ 4V, 1MHz
  • Mounting Type:Surface Mount
  • Package / Case:DO-213AB, MELF
  • Supplier Device Package:DO-213AB (MELF)
  • Operating Temperature - Junction:-55°C ~ 125°C
  • Grade:Automotive
  • Qualification:AEC-Q101

Download product information

BYM13-30HE3_A/H

Overview

The BYM13-30HE3_A/H is a silicon Schottky rectifier from Vishay Semiconductors, designed for surface-mount applications in the DO-213AB (MELF) package. It features a single diode configuration with a maximum repetitive reverse voltage of 30 V and an average forward current rating of 1 A. The device exhibits a low forward voltage drop of 500 mV at rated current and supports a high surge current capability of 30 A. Operating reliably within a junction temperature range of -55 °C to +125 °C, it incorporates low leakage current characteristics typical of Schottky technology.

Feature Summary

  • Utilizes Trench MOS Barrier Schottky technology to achieve low forward voltage drop and reduced power losses.
  • Constructed with silicon material for robust performance in high-frequency switching applications.
  • Encapsulated in a lead-free MELF (DO-213AB) package suitable for automated surface-mount assembly.

Applications

  • High frequency DC/DC converters
  • Switching power supplies
  • Freewheeling diodes
  • Reverse battery protection circuits

Procurement Notes

Verify the specific suffix 'A/H' against official Vishay documentation to confirm packaging details and compliance status. Ensure the component matches the required voltage and current ratings for the target circuit design. Cross-reference the manufacturer part number with authorized distributors to confirm availability and authenticity before procurement.

Selection Notes

Select this component when a low-profile surface-mount Schottky rectifier is required for 30 V applications. The DO-213AB package offers space efficiency compared to through-hole alternatives. Consider the 1 A current rating and thermal management requirements for the specific PCB layout. Verify compatibility with automated pick-and-place equipment due to the MELF form factor.

Part Context

This component belongs to the BYM13 series of Schottky rectifiers manufactured by Vishay General Semiconductor - Diodes Division. The series is characterized by its use of advanced Schottky barrier technology for improved efficiency. The BYM13-30 variant specifically targets low-voltage, medium-current applications requiring fast switching speeds and minimal conduction losses.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided source data. Consult Vishay technical resources or authorized distributor databases for equivalent components with matching electrical specifications and package dimensions.

BYM13-30HE3_A/HBYM13-30HE3_A/H

Click on the inquiry