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The BYM13-30HE3_A/H is a silicon Schottky rectifier from Vishay Semiconductors, designed for surface-mount applications in the DO-213AB (MELF) package. It features a single diode configuration with a maximum repetitive reverse voltage of 30 V and an average forward current rating of 1 A. The device exhibits a low forward voltage drop of 500 mV at rated current and supports a high surge current capability of 30 A. Operating reliably within a junction temperature range of -55 °C to +125 °C, it incorporates low leakage current characteristics typical of Schottky technology.
Verify the specific suffix 'A/H' against official Vishay documentation to confirm packaging details and compliance status. Ensure the component matches the required voltage and current ratings for the target circuit design. Cross-reference the manufacturer part number with authorized distributors to confirm availability and authenticity before procurement.
Select this component when a low-profile surface-mount Schottky rectifier is required for 30 V applications. The DO-213AB package offers space efficiency compared to through-hole alternatives. Consider the 1 A current rating and thermal management requirements for the specific PCB layout. Verify compatibility with automated pick-and-place equipment due to the MELF form factor.
This component belongs to the BYM13 series of Schottky rectifiers manufactured by Vishay General Semiconductor - Diodes Division. The series is characterized by its use of advanced Schottky barrier technology for improved efficiency. The BYM13-30 variant specifically targets low-voltage, medium-current applications requiring fast switching speeds and minimal conduction losses.
Public confirmed substitute part numbers are not available in the provided source data. Consult Vishay technical resources or authorized distributor databases for equivalent components with matching electrical specifications and package dimensions.