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The BYT51M-TR is a standard avalanche sinterglass diode manufactured by Vishay General Semiconductor - Diodes Division. It features a maximum repetitive peak reverse voltage of 1000 V and an average forward current rating of 1.5 A at a lead length of 10 mm. The device operates within a junction and storage temperature range of -55 to +175 °C. Electrical characteristics include a maximum forward voltage of 1.1 V at 1 A, a maximum reverse current of 1 μA at rated voltage, and a typical reverse recovery time of 4 μs. It is housed in the SOD-57 package with plated axial leads.
Verify the specific ordering code matches the required tape configuration, as the datasheet specifies distinct codes for tape and reel versus ammopack formats. Confirm that the component meets all applicable material categorization compliance definitions provided by the manufacturer before finalizing procurement specifications.
Select this component when a high-voltage standard rectifier with avalanche capability is required. Ensure the thermal resistance constraints are met based on the chosen mounting method, as the junction-to-ambient resistance varies significantly between lead-mounted and printed circuit board configurations.
This part belongs to the BYT51 series of standard avalanche sinterglass diodes from Vishay Semiconductors. The series includes variants with different reverse voltage ratings ranging from 50 V to 800 V, while maintaining consistent current handling capabilities across the lineup.
Direct substitutes include other BYT51 series variants such as BYT51K or BYT51J if lower voltage ratings are acceptable. Verify that any replacement maintains the SOD-57 package dimensions and axial lead compatibility for existing board layouts.