SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BYT52J-TAP is a fast silicon mesa rectifier manufactured by Vishay General Semiconductor - Diodes Division. It features a maximum DC reverse voltage of 600 V and an average forward rectified current of 1.4 A. The device utilizes the SOD-57 (SOD-323) surface-mount package. Key electrical parameters include a maximum forward voltage of 1.3 V at 1 A, a reverse leakage current of 5 µA at 600 V, and a fast switching time of 200 ns.
Verify the specific suffix TAP indicates tape-and-reel packaging when ordering. Confirm RoHS compliance status as per the latest manufacturer documentation. Ensure the SOD-57 footprint matches the design layout. Check for any recent product change notices affecting pinout or materials.
Select this component for designs requiring high voltage isolation and rapid switching speeds. The low forward voltage minimizes conduction losses. Compare against standard rectifiers if speed is critical. Ensure thermal management supports the 1.4 A continuous current rating in the chosen enclosure.
This part belongs to the BYT52 series of fast silicon mesa rectifiers from Vishay. These devices are designed for general-purpose applications requiring fast recovery characteristics. The series offers various voltage ratings within the same compact package family.
Compatible substitutes include BYT52G-TAP (400V) and BYT52H-TAP (800V) from the same series. Verify voltage derating requirements when substituting lower voltage variants. Ensure identical package dimensions for direct replacement.