Diode Arrays BYV32-100HE3/45 product image

BYV32-100HE3/45

  • Description:DIODE ARRAY GP 100V 18A TO-220-3
  • Series:-

SKU:0891c56b4de4 Category: Brand:

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BYV32-100HE3/45 is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is DIODE ARRAY GP 100V 18A TO-220-3. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for BYV32-100HE3/45

  • Description:DIODE ARRAY GP 100V 18A TO-220-3
  • Series:-
  • Mfr:Vishay General Semiconductor - Diodes Division
  • Package:Tube
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):100 V
  • Current - Average Rectified (Io) (per Diode):18A
  • Voltage - Forward (Vf) (Max) @ If:1.15 V @ 20 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):25 ns
  • Current - Reverse Leakage @ Vr:10 µA @ 100 V
  • Operating Temperature - Junction:-65°C ~ 150°C
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3
  • Supplier Device Package:TO-220-3
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for BYV32-100HE3/45

BYV32-100HE3/45

Diode Arrays Overview

The BYV32-100HE3/45 is a dual common-cathode ultrafast rectifier manufactured by Vishay General Semiconductor. It features a glass passivated pellet chip junction and is housed in a TO-220AB package. The device supports a maximum repetitive peak reverse voltage of 100 V and an average forward rectified current of 18 A at a case temperature of 125 °C. Key electrical characteristics include a maximum instantaneous forward voltage of 1.15 V, a peak forward surge current of 150 A, and a typical reverse recovery time of 25 ns. The component operates within a temperature range of -65 to +150 °C.

Diode Arrays Feature Summary

  • Ultrafast recovery time with low switching losses for high efficiency
  • Glass passivated pellet chip junction construction
  • Low forward voltage drop characteristic
  • High forward surge current capability

Diode Arrays Applications

  • High frequency rectification in switching mode power supplies
  • Inverter circuits
  • Freewheeling diodes
  • DC/DC converters

Diode Arrays Procurement Notes

Verify the specific ordering code against the manufacturer's documentation to ensure compliance with regional standards. Confirm that the HE3 suffix aligns with required material categorization and whisker test specifications. Check for automotive qualification requirements if the application demands AEC-Q101 certification, as standard commercial grades may differ from qualified variants.

Diode Arrays Selection Notes

Select this component based on its 100 V blocking voltage and 18 A continuous current rating suitable for medium-power applications. Consider the thermal resistance from junction to case when designing heat dissipation strategies. Ensure the operating environment stays within the specified temperature limits and verify that the package dimensions fit the intended PCB layout or heatsink mounting constraints.

Diode Arrays Part Context

This part belongs to the BYV32 series of dual common-cathode ultrafast rectifiers. The series includes variants with different voltage ratings ranging from 50 V to 200 V. The BYV32-100 variant specifically targets applications requiring 100 V isolation. The HE3 suffix indicates RoHS compliance and adherence to specific material categorization guidelines defined by the manufacturer.

Diode Arrays Replacement Considerations

Direct substitutes within the same family include BYV32-50, BYV32-150, and BYV32-200, provided the voltage ratings match the circuit requirements. Other packages such as ITO-220AB (BYVF32) or D2PAK (BYVB32) offer equivalent electrical performance but require mechanical adaptation.

BYV32-100HE3/45BYV32-100HE3/45

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