Diode Arrays BYV32E-300PQ product image

BYV32E-300PQ

$0.42
  • Description:DIODE ARRAY GP 300V 10A TO-220E
  • Series:-

SKU:ce3a0c0f9c64 Category: Brand:

  
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BYV32E-300PQ is listed in the Diode Arrays range at ChipApex. The manufacturer field lists WeEn Semiconductors. Its product description is DIODE ARRAY GP 300V 10A TO-220E. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for BYV32E-300PQ

  • Description:DIODE ARRAY GP 300V 10A TO-220E
  • Series:-
  • Mfr:WeEn Semiconductors
  • Package:Tube
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):300 V
  • Current - Average Rectified (Io) (per Diode):10A
  • Voltage - Forward (Vf) (Max) @ If:1.25 V @ 10 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):35 ns
  • Current - Reverse Leakage @ Vr:20 µA @ 300 V
  • Operating Temperature - Junction:175°C (Max)
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3
  • Supplier Device Package:TO-220E
  • Grade:-
  • Qualification:-

Diode Arrays datasheet and documents for BYV32E-300PQ

BYV32E-300PQ

Diode Arrays Overview

The BYV32E-300PQ is a dual ultrafast power diode manufactured by WeEn Semiconductors, housed in a TO220 package. It features two independent diodes within the single component. The device supports a repetitive peak reverse voltage of 300 V and an average forward current of 10 A per diode. The maximum forward voltage is specified at 1.25 V under standard conditions. Reverse recovery time is rated at 25 ns. The non-repetitive peak forward surge current reaches 220 A for a duration of 8.3 ms. The maximum junction temperature is 175 °C.

Diode Arrays Feature Summary

  • Ultra low leakage current
  • High junction temperature capability up to 175 °C
  • Low on-state loss
  • Fast switching with soft recovery characteristic

Diode Arrays Applications

  • Home appliance power supply
  • Secondary rectification

Diode Arrays Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packing method and compliance status. Confirm that the requested part number matches the exact RoHS and lead-free requirements specified in the product data sheet. Cross-reference the 12NC code with the orderable part number to prevent procurement errors related to packaging variations or obsolete revisions.

Diode Arrays Selection Notes

Select this component for circuits requiring high-speed rectification with moderate current handling capabilities. The dual configuration allows for efficient use of board space in applications such as secondary rectification stages. Ensure thermal management design accommodates the specified maximum junction temperature and thermal resistance characteristics for reliable long-term operation.

Diode Arrays Part Context

This component belongs to the BYV32E series of dual ultrafast power diodes from WeEn Semiconductors. The series is designed for high-frequency switching applications where fast recovery and low reverse leakage are critical. The TO220 package provides robust mechanical stability and thermal dissipation suitable for through-hole mounting in industrial and consumer electronics.

Diode Arrays Replacement Considerations

Check for direct pin-compatible substitutes within the same family or equivalent specifications from other manufacturers. Verify that any replacement maintains the 300 V reverse voltage rating, 10 A average current capacity, and similar reverse recovery time to ensure circuit performance integrity.

BYV32E-300PQBYV32E-300PQ
$0.42
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