BYVB32-200HE3_A/I

Diode Arrays Overview

The BYVB32-200HE3_A/I is a dual common-cathode ultrafast rectifier manufactured by Vishay General Semiconductor. It utilizes a glass passivated pellet chip junction and is housed in a D2PAK (TO-263AB) surface-mount package. The device supports a maximum repetitive peak reverse voltage of 200 V and an average forward rectified current of 18 A at a case temperature of 125 °C. Key electrical characteristics include a maximum instantaneous forward voltage of 1.15 V, a peak forward surge current capability of 150 A, and a typical reverse recovery time of 25 ns.

Diode Arrays Feature Summary

• Glass passivated pellet chip junction for high reliability
• Ultrafast recovery time with low switching losses
• Low forward voltage drop to enhance efficiency
• High forward surge current capability

Diode Arrays Applications

• High frequency rectification in switching mode power supplies
• Inverter circuits
• Freewheeling diodes
• DC/DC converters
• General power switching applications

Diode Arrays Procurement Notes

Verify the specific ordering code against official documentation to confirm compliance requirements. The HE3 suffix indicates RoHS compliance and adherence to JESD 201 class 2 whisker testing standards. Confirm that the D2PAK (TO-263AB) package matches the intended PCB footprint and thermal management strategy before finalizing procurement.

Diode Arrays Selection Notes

Select this component when a dual common-cathode configuration is required for space-constrained designs. The TO-263AB package offers efficient heat dissipation suitable for moderate power levels. Ensure the operating environment does not exceed the specified maximum junction temperature of 150 °C and verify that the 25 ns reverse recovery time meets the circuit's switching speed requirements.

Diode Arrays Part Context

This part belongs to the BYV32 series family, which includes variants in TO-220AB and ITO-220AB packages. The BYVB32 designation specifically identifies the D2PAK (TO-263AB) surface-mount version within this lineup. All variants share identical electrical ratings but differ in physical dimensions and mounting methods.

Diode Arrays Replacement Considerations

Direct substitutes within the same series include BYVB32-200-M3/I and BYVB32-200HM3/I. These alternatives maintain the same electrical specifications and package type while differing in halogen content or automotive qualification status.

Diode Arrays FAQ

What is the maximum junction temperature for the BYVB32-200HE3_A/I?

The maximum operating storage and junction temperature range is -65 to +150 °C.

Does the HE3 suffix indicate automotive qualification?

Yes, the HE3 suffix denotes that the device is RoHS-compliant and AEC-Q101 qualified.

What is the typical reverse recovery time per diode?

The typical reverse recovery time is 25 ns under standard test conditions.