Diode Arrays BYVF32-100HE3_A/P product image

BYVF32-100HE3_A/P

$0.71
  • Description:DIODE ARRAY GP 100V 18A ITO220AB
  • Series:-

SKU:f0b3a9a5613a Category: Brand:

  
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BYVF32-100HE3_A/P is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is DIODE ARRAY GP 100V 18A ITO220AB. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for BYVF32-100HE3_A/P

  • Description:DIODE ARRAY GP 100V 18A ITO220AB
  • Series:-
  • Mfr:Vishay General Semiconductor - Diodes Division
  • Package:Tube
  • Diode Configuration:1 Pair Common Cathode
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):100 V
  • Current - Average Rectified (Io) (per Diode):18A
  • Voltage - Forward (Vf) (Max) @ If:1.15 V @ 20 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):25 ns
  • Current - Reverse Leakage @ Vr:10 µA @ 100 V
  • Operating Temperature - Junction:-65°C ~ 150°C
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3 Full Pack, Isolated Tab
  • Supplier Device Package:ITO-220AB
  • Grade:Automotive
  • Qualification:AEC-Q101

Diode Arrays datasheet and documents for BYVF32-100HE3_A/P

BYVF32-100HE3_A/P

Diode Arrays Overview

The BYVF32-100HE3_A/P is a dual common-cathode ultrafast rectifier manufactured by Vishay General Semiconductor. It features an ITO-220AB package and glass passivated pellet chip junction. Key electrical parameters include a maximum average forward rectified current of 18 A, a maximum repetitive peak reverse voltage of 100 V, and a peak forward surge current of 150 A. The device exhibits an ultrafast reverse recovery time of 25 ns and a maximum instantaneous forward voltage of 0.85 V at 5.0 A and 100 °C. It operates within a temperature range of -65 to +150 °C.

Diode Arrays Feature Summary

  • Ultrafast recovery time for high efficiency and low switching losses
  • Glass passivated pellet chip junction for reliability
  • High forward surge capability
  • Low forward voltage drop

Diode Arrays Applications

  • High frequency rectification in switching mode power supplies
  • Inverters
  • Freewheeling diodes
  • DC/DC converters
  • Other power switching applications

Diode Arrays Procurement Notes

Verify the specific ordering code suffix against official documentation to confirm package type and qualification status. The HE3 suffix indicates RoHS compliance and adherence to JESD 201 class 2 whisker test requirements. Confirm that the ITO-220AB package matches the intended mechanical design constraints before finalizing procurement orders.

Diode Arrays Selection Notes

Select this component for circuits requiring fast switching characteristics and high current handling capabilities. Ensure the thermal management design accommodates the specified junction-to-case thermal resistance. Verify that the operating voltage does not exceed the 100 V repetitive peak reverse voltage rating under all transient conditions.

Diode Arrays Part Context

This part belongs to the BYV32 series of dual common-cathode ultrafast rectifiers from Vishay General Semiconductor. The series offers various voltage ratings ranging from 50 V to 200 V and is available in multiple packages including TO-220AB, ITO-220AB, and D2PAK (TO-263AB). The BYVF32 variant specifically utilizes the ITO-220AB package format.

Diode Arrays Replacement Considerations

Direct replacements within the same series include BYVF32-50, BYVF32-150, and BYVF32-200, which share identical package and general electrical characteristics but differ in reverse voltage ratings. Cross-package equivalents such as BYV32-100-E3 are available in the TO-220AB format.

BYVF32-100HE3_A/PBYVF32-100HE3_A/P
$0.71
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