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The BYW85-TAP is a standard avalanche sinterglass diode manufactured by Vishay General Semiconductor - Diodes Division. It features an SOD-64 package with plated axial leads and is designed for general-purpose rectification applications. The device supports a maximum repetitive peak reverse voltage of 800 V and an average forward current of 3 A. Key electrical characteristics include a maximum forward voltage of 1 V at 3 A, a maximum reverse current of 0.1 µA at rated voltage, and a breakdown voltage of 1600 V under specified test conditions. The component operates within a junction temperature range of -55 °C to +175 °C.
Verify the specific ordering code BYW85-TAP against the manufacturer's datasheet to confirm the ammopack packaging format and unit quantity. Ensure that the 800 V reverse voltage rating aligns with the circuit requirements. Confirm compliance with RoHS directives and material categorization standards before finalizing procurement orders.
Select this component when an 800 V blocking voltage and 3 A continuous current capacity are required in an SOD-64 through-hole package. Consider its controlled avalanche behavior if the application involves inductive loads or potential voltage spikes. Verify thermal resistance parameters relative to the expected ambient temperature and lead length constraints.
The BYW85-TAP belongs to the BYW82 through BYW86 series of standard avalanche sinterglass diodes from Vishay Semiconductors. This family shares identical mechanical dimensions and electrical performance profiles except for the reverse voltage rating, which scales from 200 V to 1000 V across the series variants.
Direct substitutes within the same Vishay series include BYW82, BYW83, BYW84, and BYW86, provided their respective reverse voltage ratings meet or exceed the circuit requirements. Cross-manufacturer replacements must match the SOD-64 package, 800 V VR, and 3 A IF(AV) specifications.
The maximum repetitive peak reverse voltage (VR = VRRM) for the BYW85 is 800 V.
Yes, the BYW85 features controlled avalanche characteristics and can handle a pulse avalanche peak power of 1000 W at a junction temperature of 175 °C.
The typical reverse recovery time ranges from 3.5 µs to 7.5 µs depending on the specific test conditions applied.