C2M0080170P

$27.63

Description：SICFET N-CH 1700V 40A TO247-4
Series：C2M™
Mfr：Wolfspeed, Inc.
Package：Tube

SKU:3b880d1ca157 Category: Single FETs, MOSFETs Brand: Wolfspeed, Inc.

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Product introduction

Product Detailed Parameters

Description：SICFET N-CH 1700V 40A TO247-4
Series：C2M™
Mfr：Wolfspeed, Inc.
Package：Tube
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：1700 V
Current - Continuous Drain (Id) @ 25°C：40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：20V
Rds On (Max) @ Id, Vgs：125mOhm @ 28A, 20V
Vgs(th) (Max) @ Id：4V @ 10mA
Gate Charge (Qg) (Max) @ Vgs：120 nC @ 20 V
Vgs (Max)：+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds：2250 pF @ 1000 V
FET Feature：-
Power Dissipation (Max)：277W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247-4L
Package / Case：TO-247-4

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C2M0080170P

Overview

The C2M0080170P is a Wolfspeed silicon carbide (SiC) N-channel enhancement-mode MOSFET designed for high-voltage power switching applications. It features a 1700 V drain-source voltage rating and a maximum continuous drain current of 40 A at case temperature. The device exhibits a low on-resistance of 80 mΩ, contributing to reduced conduction losses. Packaged in a TO-247 form factor with four pins for through-hole mounting, it supports junction temperatures up to 150 °C and offers a maximum power dissipation of 277 W.

Feature Summary

Utilizes silicon carbide semiconductor technology for superior thermal performance and high-voltage capability.
Features an N-channel enhancement mode configuration optimized for efficient power switching.
Designed with a rugged package structure suitable for demanding industrial environments.

Applications

High-efficiency DC/DC converters
On-board chargers (OBC)
Industrial motor drives

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official datasheet to confirm pinout and electrical tolerances. Ensure the procurement channel provides original manufacturer documentation to validate authenticity. Confirm RoHS compliance status and lead times directly with authorized distributors prior to placing orders.

Selection Notes

Select this component when system requirements demand a 1700 V breakdown voltage with moderate current handling capabilities. The TO-247 package facilitates effective heat sinking for high-power density designs. Evaluate gate charge specifications against driver capabilities to optimize switching speed and minimize dynamic losses in the target application topology.

Part Context

This part belongs to the Wolfspeed C2M series of silicon carbide MOSFETs. The series is engineered to replace traditional silicon devices in high-voltage systems, offering lower switching losses and higher operating temperatures. The C2M0080170P specifically targets applications requiring robust performance under extreme electrical stress conditions.

Replacement Considerations

Direct replacements must match the 1700 V rating and TO-247 footprint. Verify that alternative SiC MOSFETs have compatible gate threshold voltages and thermal resistance characteristics to ensure seamless integration without redesigning the cooling or drive circuitry.