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Product Detailed Parameters
- Description：SICFET N-CH 1200V 19A TO247-3
- Series：Z-FET™
- Mfr：Wolfspeed, Inc.
- Package：Tube
- FET Type：N-Channel
- Technology：SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss)：1200 V
- Current - Continuous Drain (Id) @ 25°C：19A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：20V
- Rds On (Max) @ Id, Vgs：196mOhm @ 10A, 20V
- Vgs(th) (Max) @ Id：2.5V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs：32.6 nC @ 20 V
- Vgs (Max)：+25V, -10V
- Input Capacitance (Ciss) (Max) @ Vds：527 pF @ 800 V
- FET Feature：-
- Power Dissipation (Max)：125W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-247-3
- Package / Case：TO-247-3
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Overview
The C2M0160120D is a Wolfspeed N-Channel Enhancement Mode Silicon Carbide MOSFET utilizing C2M technology. It features a 1200V drain-source breakdown voltage and a maximum on-state resistance of 196 mΩ at VGS=20V, ID=10A. The device supports a continuous drain current of 18A at TC=25°C and handles a pulsed current of 40A. Operating within a junction temperature range of -55°C to +150°C, it offers a power dissipation capacity of 125W. Key switching parameters include a turn-on energy of 121µJ and turn-off energy of 48µJ under standard test conditions.
Feature Summary
- High blocking voltage combined with low on-resistance for improved efficiency
- Fast switching speeds supported by low internal capacitances
- Robust avalanche ruggedness and latch-up resistance
Applications
- Solar inverters
- Switch mode power supplies
- High voltage DC/DC converters
- LED lighting power supplies
Procurement Notes
Verify the specific revision level against the latest Wolfspeed datasheet before finalizing designs. Confirm that the TO-247-3 package dimensions match the target PCB footprint. Ensure thermal management solutions accommodate the specified junction-to-case thermal resistance. Check for any updated RoHS or REACH compliance declarations required by the destination market regulations.
Selection Notes
Select this component when designing systems requiring high-voltage operation up to 1200V with moderate current handling capabilities around 18A. The low gate charge facilitates efficient driver design. Consider the thermal derating curves for continuous operation at elevated case temperatures. Evaluate the single-pulse avalanche energy rating if inductive load protection is required without external snubbers.
Part Context
This discrete SiC MOSFET belongs to the C2M family, designed to replace traditional silicon devices in high-frequency applications. It utilizes Wolfspeed's proprietary C2M process to achieve superior performance metrics compared to earlier generations. The component serves as a fundamental building block for power conversion stages in renewable energy and industrial electronics.
Replacement Considerations
Consult official Wolfspeed documentation for verified cross-reference part numbers. Do not assume functional equivalence with other manufacturers' devices without detailed parameter comparison.
