SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The C3D06065I is a third-generation, 650 V Silicon Carbide Schottky diode from Wolfspeed. It features an isolated TO-220-2 package with 2.5 kV electrical isolation. The device supports a continuous forward current of 13 A at 25°C and 6 A at 135°C. Typical forward voltage is 1.5 V at 6 A and 25°C, rising to 2.0 V at 175°C. Total capacitive charge is 15 nC at 400 V reverse bias. Thermal resistance from junction to case is typically 3.3 °C/W.
Verify the specific ordering suffix matches the required isolation and package configuration. Confirm RoHS and REACh compliance documentation availability through official Wolfspeed channels prior to finalizing procurement specifications. Ensure the selected component meets all environmental and regulatory standards required for the target industrial application.
Select this component when high-frequency switching and reduced cooling requirements are necessary. The isolated package eliminates the need for external insulating materials in certain chassis designs. Evaluate thermal derating curves for operating temperatures above 25°C to ensure the continuous current rating remains within safe limits for the specific system environment.
This discrete SiC Schottky diode belongs to Wolfspeed's third-generation product family. It is designed to replace silicon-based solutions in power electronics systems requiring higher efficiency and power density. The technology allows for increased switching frequencies while maintaining low conduction losses across a wide temperature range.
No public confirmed substitute part numbers are available in the provided datasheet.
No, as a Silicon Carbide Schottky diode, it is a majority carrier device with zero reverse recovery charge and zero forward recovery voltage.
The maximum junction temperature (Tj) for the C3D06065I is +175°C.