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The C3D08060G-TR is a 600 V, 8 A Silicon Carbide Schottky Diode manufactured by Wolfspeed. It utilizes TO-263-2 surface-mount packaging and operates within a junction temperature range of -55 °C to +175 °C. The device features a maximum forward voltage of 1.8 V at 8 A and 25 °C, with a reverse current of 42.5 µA at 600 V. Key electrical parameters include a thermal resistance from junction to case of 1.4 °C/W and a non-repetitive peak forward surge current capability of 71 A.
Verify the specific ordering suffix '-TR' corresponds to tape and reel packaging rather than tube configuration. Confirm that the component marking matches 'C3D08060' as specified in the datasheet package outline section. Ensure compliance documentation aligns with industrial qualification requirements.
Select this component when replacing bipolar diodes to achieve essentially no switching losses and higher system efficiency. Consider its positive temperature coefficient benefits for parallel device operation without thermal runaway. Evaluate the TO-263-2 footprint against available board space and thermal management constraints.
This discrete SiC Schottky Diode belongs to Wolfspeed's industrial qualified product line. It is designed to improve system-level power density and reduce cooling requirements through lower conduction losses. The device supports high switching frequency operation suitable for modern compact power electronics designs.
Public confirmed substitute part numbers are not provided in the source material.