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Product Detailed Parameters
- Description：SICFET N-CH 650V 120A TO247-3
- Series：C3M™
- Mfr：Wolfspeed, Inc.
- Package：Tube
- FET Type：N-Channel
- Technology：SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss)：650 V
- Current - Continuous Drain (Id) @ 25°C：120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：15V
- Rds On (Max) @ Id, Vgs：21mOhm @ 55.8A, 15V
- Vgs(th) (Max) @ Id：3.6V @ 15.5mA
- Gate Charge (Qg) (Max) @ Vgs：188 nC @ 15 V
- Vgs (Max)：+15V, -4V
- Input Capacitance (Ciss) (Max) @ Vds：5011 pF @ 400 V
- FET Feature：-
- Power Dissipation (Max)：416W (Tc)
- Operating Temperature：-40°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-247-3
- Package / Case：TO-247-3
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Overview
The C3M0015065D is a third-generation silicon carbide (SiC) MOSFET from Wolfspeed, packaged in a TO-247-3 leaded format. It features an N-channel enhancement mode configuration with a drain-source voltage rating of 650 V and a continuous drain current of 120 A at 25°C case temperature. The device exhibits a typical on-resistance of 15 mΩ and supports operation across a junction temperature range of -40°C to +175°C. Key electrical characteristics include a total gate charge of 188 nC and a maximum power dissipation of 416 W.
Feature Summary
- Third-generation SiC MOSFET technology providing high blocking voltage combined with low on-resistance for improved efficiency.
- High-speed switching capabilities supported by low parasitic capacitances to minimize energy loss during transitions.
- Fast intrinsic body diode characterized by low reverse recovery charge suitable for hard-switching topologies.
Applications
- Electric vehicle charging systems
- Solar photovoltaic inverters
- Uninterruptible power supplies
- Switch-mode power supplies
- DC/DC converters
Procurement Notes
Verify the specific package marking and revision history against the manufacturer's datasheet prior to procurement. Confirm that the ordering suffix corresponds to the required RoHS compliance status and halogen-free specifications. Ensure compatibility with recommended solder pad layouts and mounting torque requirements specified in the official documentation.
Selection Notes
Select this component for designs requiring high power density and reduced cooling requirements due to its low thermal resistance. Evaluate the trade-off between switching speed and electromagnetic interference based on external gate resistor values. Consider the device's capability to enable Totem-Pole PFC topologies when designing advanced power conversion stages.
Part Context
This part belongs to the C3M™ series of discrete silicon carbide power MOSFETs manufactured by Wolfspeed. The series utilizes advanced third-generation technology to deliver industry-leading performance metrics. The product line is designed to replace traditional silicon devices in high-efficiency applications, offering superior thermal management and switching performance.
Replacement Considerations
Consult official substitution guides for verified equivalents within the same voltage and current ratings. Verify pinout compatibility and thermal interface dimensions before replacing existing components in established designs.
