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Product Detailed Parameters
- Description：SIC, MOSFET, 120M, 650V, TOLL, I
- Series：-
- Mfr：Wolfspeed, Inc.
- Package：Tape & Reel (TR)
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
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Overview
The C3M00160120D is a silicon carbide (SiC) MOSFET from the Wolfspeed 1200V family, featuring a 16 mΩ typical on-resistance and rated for 100 A continuous drain current. It utilizes a TO-247-3 package with through-hole mounting. Key electrical parameters include a 1.2 kV breakdown voltage, ±20 V gate-source voltage limit, and 32.6 nC total gate charge. The device supports operation between -55°C and +150°C junction temperature, with power dissipation up to 125 W.
Feature Summary
- Industry-leading low on-resistance across the operating temperature range
- High-speed switching capability with low output capacitance
- Fast intrinsic body diode with minimal reverse recovery charge
- Designed for easy paralleling and simple gate drive requirements
Applications
- Onboard electric vehicle charging systems
- DC-DC converters in hybrid and electric vehicles
- Industrial motor drives and inverters
- High-efficiency power supply topologies
Procurement Notes
Verify the specific suffix 'D' against the manufacturer's official datasheet to confirm pinout and thermal characteristics. Confirm RoHS compliance status via the latest documentation. Check for end-of-life notices or obsolescence warnings before finalizing procurement plans.
Selection Notes
Select this component for high-frequency applications requiring low conduction losses. Ensure the gate driver can handle the specified threshold voltage and provide adequate current for the gate charge. Verify that the thermal management solution supports the 125 W dissipation rating under expected load conditions.
Part Context
This part belongs to the Wolfspeed C3M series of discrete SiC MOSFETs. It is designed to replace silicon IGBTs in high-voltage applications. The TO-247-3 package is standard for through-hole mounting in industrial and automotive power modules.
Replacement Considerations
Direct substitutes within the same family include C3M00210120D and C3M00320120D, which offer higher on-resistance but similar packaging. Cross-family replacements require verification of pin compatibility and thermal resistance values.
