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Product Detailed Parameters
- Description：SICFET N-CH 1200V 115A TO247-3
- Series：C3M™
- Mfr：Wolfspeed, Inc.
- Package：Tube
- FET Type：N-Channel
- Technology：SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss)：1200 V
- Current - Continuous Drain (Id) @ 25°C：115A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：15V
- Rds On (Max) @ Id, Vgs：22.3mOhm @ 75A, 15V
- Vgs(th) (Max) @ Id：3.6V @ 23mA
- Gate Charge (Qg) (Max) @ Vgs：207 nC @ 15 V
- Vgs (Max)：+15V, -4V
- Input Capacitance (Ciss) (Max) @ Vds：6085 pF @ 1000 V
- FET Feature：-
- Power Dissipation (Max)：556W (Tc)
- Operating Temperature：-40°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-247-3
- Package / Case：TO-247-3
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Overview
The C3M0016120D is a Silicon Carbide (SiC) MOSFET from the C3M family, packaged in TO-247-3. It features a 1200V drain-source breakdown voltage and a typical on-resistance of 16mΩ at 25°C. The device supports a continuous drain current of 115A at 25°C case temperature and handles a pulsed current of 250A. Key electrical parameters include a gate threshold voltage of 2.5V typical, input capacitance of 6085pF, and reverse recovery charge of 604nC. Thermal resistance from junction to case is 0.27°C/W.
Feature Summary
- Utilizes Wolfspeed C3M SiC MOSFET technology for high blocking voltage combined with low on-resistance.
- Features fast intrinsic diode characteristics with low reverse recovery charge.
- Designed for high-speed switching with low output capacitances.
- Halogen-free and RoHS compliant construction.
Applications
- Renewable energy systems
- High voltage DC/DC converters
- Switch Mode Power Supplies
- Uninterruptible Power Supplies
Procurement Notes
Verify the specific package marking matches the datasheet requirements before integration. Confirm that thermal management designs account for the specified junction-to-case thermal resistance values under actual operating conditions. Ensure gate drive voltages remain within the recommended operational limits to maintain device reliability and performance specifications.
Selection Notes
Select this component for applications requiring high efficiency and increased power density due to its low on-resistance and fast switching capabilities. Consider the TO-247-3 package footprint during PCB layout design. Evaluate the thermal derating curves to ensure continuous current ratings are met across the expected operating temperature range.
Part Context
This part belongs to the Wolfspeed C3M series of discrete Silicon Carbide MOSFETs. The series offers industry-standard package footprints designed to facilitate system upgrades and cost optimization. These devices leverage wide-bandgap material properties to outperform traditional silicon counterparts in high-voltage power electronics applications.
Replacement Considerations
Cross-reference pinouts and thermal characteristics when substituting other TO-247-3 packages. Verify that alternative components meet or exceed the 1200V breakdown voltage and 16mΩ on-resistance specifications to maintain system performance integrity.
FAQ
What is the maximum operating junction temperature?
The maximum operating junction temperature is +175°C.
Is this device suitable for automotive use?
No, the product documentation explicitly states it is not designed or intended for use in automotive applications where failure could cause injury or death.
