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Product Detailed Parameters
- Description：GEN 3 650V 25 M SIC MOSFET
- Series：C3M™
- Mfr：Wolfspeed, Inc.
- Package：Tube
- FET Type：N-Channel
- Technology：SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss)：650 V
- Current - Continuous Drain (Id) @ 25°C：97A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：15V
- Rds On (Max) @ Id, Vgs：34mOhm @ 33.5A, 15V
- Vgs(th) (Max) @ Id：3.6V @ 9.22mA
- Gate Charge (Qg) (Max) @ Vgs：108 nC @ 15 V
- Vgs (Max)：+19V, -8V
- Input Capacitance (Ciss) (Max) @ Vds：2980 pF @ 600 V
- FET Feature：-
- Power Dissipation (Max)：326W (Tc)
- Operating Temperature：-40°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-247-3
- Package / Case：TO-247-3
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Overview
The C3M0025065D is a third-generation silicon carbide (SiC) MOSFET from Wolfspeed, packaged in a TO-247-3 through-hole footprint. It features an N-channel enhancement mode configuration with a drain-source voltage rating of 650 V and a maximum gate-source voltage of +19 V transient. At 25°C case temperature, the device supports a continuous drain current of 97 A and exhibits a typical on-resistance of 25 mΩ. The component operates within a junction temperature range of -40°C to +175°C, with a power dissipation capacity of 326 W at 25°C case temperature.
Feature Summary
- Third-generation SiC MOSFET technology providing high blocking voltage combined with low on-resistance.
- High-speed switching capabilities supported by low parasitic capacitances for efficient operation.
- Fast intrinsic body diode characterized by low reverse recovery charge (Qrr).
- Halogen-free construction compliant with RoHS standards.
Applications
- Electric vehicle (EV) chargers
- Uninterruptible power supplies (UPS)
- Solar inverters
- Industrial switch-mode power supplies (SMPS)
- DC/DC converters
Procurement Notes
Verify the specific datasheet revision against the manufacturer's official documentation prior to design finalization. Confirm that the TO-247-3 package dimensions align with the target PCB layout requirements. Ensure thermal management solutions accommodate the specified junction-to-case thermal resistance and power dissipation limits under actual operating conditions.
Selection Notes
Select this component for designs requiring high efficiency and increased power density in hard-switching topologies. The low on-resistance and fast switching characteristics support higher system switching frequencies. Verify compatibility with recommended gate drive voltages (+15V turn-on, -4V turn-off) to optimize performance and ensure safe operating area compliance during transient events.
Part Context
This device belongs to the Wolfspeed C3M series of discrete silicon carbide power MOSFETs. It utilizes Wolfspeed's proprietary C3M technology to deliver enhanced performance over previous generations. The product line targets applications demanding robust power conversion capabilities within industry-standard package footprints, facilitating flexible system upgrades and cost optimization.
Replacement Considerations
Consult official Wolfspeed documentation for verified substitute part numbers. Do not assume functional equivalence with other manufacturers' devices without comprehensive electrical and thermal validation.
FAQ
What are the recommended static gate drive voltages?
The datasheet specifies a recommended turn-on gate voltage of 15 V and a turn-off voltage of -4 V.
How does the on-resistance vary with temperature?
The on-resistance increases as the junction temperature rises, reaching approximately 33 mΩ at 175°C compared to 25 mΩ at 25°C.
Is the internal body diode suitable for freewheeling applications?
Yes, the device features a fast intrinsic diode with low reverse recovery charge, making it suitable for applications requiring frequent diode recovery cycles.
