C3M0025065J1-TR

Overview

The C3M0025065J1-TR is a third-generation silicon carbide (SiC) MOSFET from Wolfspeed, packaged in a TO-263-7L XL. It features an N-channel enhancement mode configuration with a drain-source voltage rating of 650 V and a typical on-resistance of 25 mΩ at 25°C. The device supports a continuous drain current of 80 A and operates within a junction temperature range of -40°C to +175°C. Key electrical characteristics include a total gate charge of 109 nC and a maximum power dissipation of 271 W.

Feature Summary

• Third-generation SiC MOSFET technology optimized for high blocking voltage and low on-resistance.
• Integrated Kelvin source pin to minimize switching losses and reduce gate ringing.
• Fast intrinsic body diode with low reverse recovery charge for efficient hard-switching applications.
• Low parasitic capacitances enabling high-speed switching operations.

Applications

• Datacenter and telecom power supplies
• EV battery chargers
• High voltage DC/DC converters
• Energy storage systems
• Solar inverters

Procurement Notes

Verify the specific ordering suffix '-TR' corresponds to the tape-and-reel packaging format required for automated assembly processes. Confirm that the component meets RoHS compliance standards as specified by the manufacturer. Ensure compatibility with the recommended solder pad layout provided in the datasheet to maintain thermal performance and mechanical reliability during surface mount assembly.

Selection Notes

Select this component for designs requiring high efficiency and power density in medium-voltage applications. The separate driver source pin facilitates precise gate control, reducing electromagnetic interference. Evaluate the thermal resistance characteristics against the system's cooling capabilities to ensure operation remains within the safe operating area under maximum load conditions.

Part Context

This part belongs to the C3M series of discrete silicon carbide power MOSFETs manufactured by Wolfspeed. The series utilizes advanced SiC technology to outperform traditional silicon devices in terms of switching speed and thermal stability. The TO-263-7L XL package provides a robust solution for surface-mount applications requiring high current handling and efficient heat dissipation.

Replacement Considerations

Compatible alternatives within the same family include C3M0025065D and C3M0025065K. Verify pinout compatibility and thermal specifications when substituting these variants to ensure seamless integration into existing circuit designs without requiring PCB modifications.

FAQ

What is the purpose of the separate Kelvin source pin?

The Kelvin source pin provides a dedicated path for the gate drive return current, separating it from the high-current power source pins. This minimizes voltage spikes and ground bounce, thereby reducing switching losses and gate ringing.

Is the internal body diode suitable for freewheeling applications?

Yes, the device features a fast intrinsic diode with low reverse recovery charge (Qrr), making it suitable for hard-switching topologies where the body diode conducts current.