C3M0025065J1

Overview

The C3M0025065J1 is a third-generation silicon carbide (SiC) MOSFET from Wolfspeed, packaged in a TO-263-7L XL. It features an N-channel enhancement mode configuration with a drain-source voltage rating of 650 V and a maximum gate-source voltage of +19 V transient or -4/+15 V static. The device exhibits a typical on-resistance of 25 mΩ at 25°C and supports a continuous drain current of 80 A. Key electrical parameters include a total gate charge of 109 nC, input capacitance of 2980 pF, and output capacitance stored energy of 19 μJ. Thermal characteristics specify a junction-to-case resistance of 0.46 °C/W, with an operating junction temperature range of -40 to +175°C.

Feature Summary

• Third-generation SiC MOSFET technology optimized for high blocking voltage and low on-resistance.
• Package design includes a separate Kelvin driver source pin to minimize gate ringing and switching losses.
• Fast intrinsic body diode characterized by ultra-low reverse recovery charge and peak current.
• Halogen-free and RoHS compliant construction suitable for industrial environments.

Applications

• Datacenter and telecom power supplies
• EV battery chargers
• High voltage DC/DC converters
• Energy storage systems
• Solar inverters

Procurement Notes

Verify the specific ordering suffix J1 corresponds to the TO-263-7L XL package variant when sourcing components. Confirm compliance documentation availability directly with the manufacturer or authorized distributors. Ensure that procurement specifications align with the required thermal management capabilities defined in the datasheet. Cross-reference part numbers against official Wolfspeed catalogs to avoid substitution errors during component acquisition.

Selection Notes

Select this component for designs requiring high efficiency and power density in medium-voltage applications. The separate Kelvin source pin facilitates precise gate drive control, reducing electromagnetic interference. Evaluate thermal performance based on the specified junction-to-case resistance and safe operating area curves. Consider the low reverse recovery characteristics of the body diode when designing hard-switching topologies or synchronous rectification circuits.

Part Context

This discrete power transistor belongs to the C3M series of silicon carbide MOSFETs manufactured by Wolfspeed. It represents the company's third-generation technology platform, designed to replace traditional silicon devices in high-performance power conversion systems. The product line targets applications demanding superior thermal stability and switching speed compared to conventional semiconductor solutions.

Replacement Considerations

Direct replacements within the same family include C3M0025065D and C3M0025065K, which share similar electrical ratings but differ in packaging configurations. Verify pinout compatibility and thermal interface requirements before substituting these variants. Other series members like C3M0045065J1 offer different on-resistance values and should be evaluated based on specific current handling needs.

FAQ

What is the purpose of the separate Kelvin source pin?

The separate Kelvin source pin (Pin 2) provides a dedicated path for the gate drive return current, isolating it from the high-current power source pins. This design minimizes parasitic inductance effects and reduces gate ringing during switching transitions.

How does the body diode perform in terms of reverse recovery?

The intrinsic body diode features ultra-low reverse recovery charge (Qrr) and peak reverse recovery current (Irrm). For example, Qrr is typically 274 nC at 25°C under specific test conditions, enabling efficient operation in hard-switching applications without significant additional switching losses.