C3M0025075K1

$16.67

Description：SICFET N-CH 750V 80A TO247
Series：-
Mfr：Wolfspeed, Inc.
Package：Bulk

SKU:f4e8bd385c60 Category: Single FETs, MOSFETs Brand: Wolfspeed, Inc.

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Product introduction

Product Detailed Parameters

Description：SICFET N-CH 750V 80A TO247
Series：-
Mfr：Wolfspeed, Inc.
Package：Bulk
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：750 V
Current - Continuous Drain (Id) @ 25°C：80A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：15V
Rds On (Max) @ Id, Vgs：34mOhm @ 33.5A, 15V
Vgs(th) (Max) @ Id：3.8V @ 9.22mA
Gate Charge (Qg) (Max) @ Vgs：119 nC @ 15 V
Vgs (Max)：-8V, +19V
Input Capacitance (Ciss) (Max) @ Vds：3055 pF @ 500 V
FET Feature：-
Power Dissipation (Max)：262W (Tc)
Operating Temperature：-40°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247-4L
Package / Case：TO-247-4

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C3M0025075K1

Overview

The Wolfspeed C3M0025075K1 is a silicon carbide (SiC) N-channel enhancement mode MOSFET rated for 750 V drain-source voltage. It features a low on-state resistance of 25 mΩ at 25°C and supports a continuous drain current of 80 A. The device utilizes a TO-247-4L LP package with a separate driver source pin to minimize gate ringing. Key electrical parameters include a maximum gate-source voltage of +19 V, a total gate charge of 119 nC, and an operating junction temperature range from -40°C to +175°C.

Feature Summary

Optimized package design featuring a separate driver source pin to reduce switching losses and minimize gate ringing.
High blocking voltage combined with low on-resistance to improve system efficiency and increase power density.
Fast intrinsic diode with low reverse recovery characteristics suitable for high-speed switching applications.

Applications

Motor Control
EV Battery Chargers
High Voltage DC/DC Converters
Solar/ESS Systems
Enterprise PSU

Procurement Notes

Verify the specific part number suffix against official documentation to confirm package type and qualification status. Ensure compatibility with recommended solder profiles and mounting torque specifications. Confirm RoHS compliance requirements for your region. Check for any updates in the datasheet revision history regarding legal disclaimers or parameter changes before finalizing procurement.

Selection Notes

Select this component for designs requiring high-voltage SiC performance in through-hole packages. Consider the thermal resistance and derating curves for heat sink sizing. Evaluate the gate charge and internal gate resistance for driver selection. Verify that the application voltage and current levels remain within the safe operating area limits defined in the datasheet.

Part Context

This discrete SiC MOSFET belongs to Wolfspeed's portfolio of wide-bandgap power devices. It is designed to replace silicon IGBTs in high-frequency applications. The TO-247-4L LP package offers industry-standard mounting while providing lower profile dimensions. It supports both hard-switching and resonant topologies for improved conversion efficiency.