C3M0032120D

$25.55

Description：SICFET N-CH 1200V 63A TO247-3
Series：C3M™
Mfr：Wolfspeed, Inc.
Package：Tube

SKU:bfc5a16f2bff Category: Single FETs, MOSFETs Brand: Wolfspeed, Inc.

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Product introduction

Product Detailed Parameters

Description：SICFET N-CH 1200V 63A TO247-3
Series：C3M™
Mfr：Wolfspeed, Inc.
Package：Tube
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：1200 V
Current - Continuous Drain (Id) @ 25°C：63A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：15V
Rds On (Max) @ Id, Vgs：43mOhm @ 40A, 15V
Vgs(th) (Max) @ Id：3.6V @ 11.5mA
Gate Charge (Qg) (Max) @ Vgs：114 nC @ 15 V
Vgs (Max)：+15V, -4V
Input Capacitance (Ciss) (Max) @ Vds：3357 pF @ 1000 V
FET Feature：-
Power Dissipation (Max)：283W (Tc)
Operating Temperature：-40°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247-3
Package / Case：TO-247-3

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C3M0032120D

Overview

The C3M0032120D is a third-generation Silicon Carbide (SiC) MOSFET from Wolfspeed, packaged in TO-247-3. It features a drain-source voltage of 1200V and a typical on-resistance of 32mΩ at 25°C. The device supports a continuous drain current of 63A and a pulsed current of 120A. Operating junction temperature ranges from -40°C to +175°C. Key electrical parameters include an input capacitance of 3357pF and a reverse recovery charge of 848nC for the intrinsic diode.

Feature Summary

Utilizes third-generation SiC technology for high blocking voltage combined with low on-resistance.
Enables high-speed switching characteristics supported by low output capacitances.
Features a fast intrinsic diode with minimized reverse recovery charge.
Designed to reduce switching losses and minimize gate ringing.

Applications

Solar inverters
EV motor drive systems
High voltage DC/DC converters
Switched mode power supplies

Procurement Notes

Verify component authenticity through official Wolfspeed channels or authorized distributors. Confirm datasheet revision status prior to design finalization. Ensure thermal management solutions align with specified junction-to-case thermal resistance limits. Validate package marking consistency with the TO-247-3 outline drawing provided in the documentation.

Selection Notes

Select this component for applications requiring high-voltage operation up to 1200V with optimized conduction losses. Consider the specific gate drive requirements, including the recommended turn-on voltage of 15V. Evaluate system efficiency gains against potential electromagnetic interference due to high-speed switching capabilities.

Part Context

This part belongs to the C3M family of discrete Silicon Carbide MOSFETs. It represents Wolfspeed's third-generation technology iteration. The product line targets cost optimization and performance enhancement in power conversion systems. It serves as a direct upgrade path for silicon-based counterparts in demanding power electronics environments.

Replacement Considerations

Cross-reference with other C3M series variants such as C3M0016120D or C3M0021120D for different on-resistance specifications within the same voltage class. Verify pinout compatibility when substituting with older Cree-branded equivalents during the transition period.