C3M0032120J1

C3M0032120J1

$30.06
  • Description:1200V 32MOHM SIC MOSFET
  • Series:C3M™
  • Mfr:Wolfspeed, Inc.
  • Package:Tube

SKU:5a600b0c8e08 Category: Brand:

  
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Product Detailed Parameters

  • Description:1200V 32MOHM SIC MOSFET
  • Series:C3M™
  • Mfr:Wolfspeed, Inc.
  • Package:Tube
  • FET Type:N-Channel
  • Technology:SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss):1200 V
  • Current - Continuous Drain (Id) @ 25°C:68A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):15V
  • Rds On (Max) @ Id, Vgs:43mOhm @ 41.4A, 15V
  • Vgs(th) (Max) @ Id:3.6V @ 11.5mA
  • Gate Charge (Qg) (Max) @ Vgs:111 nC @ 15 V
  • Vgs (Max):+15V, -4V
  • Input Capacitance (Ciss) (Max) @ Vds:3424 pF @ 1000 V
  • FET Feature:-
  • Power Dissipation (Max):277W (Tc)
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:TO-263-7
  • Package / Case:TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

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C3M0032120J1

Overview

The C3M0032120J1 is a third-generation Silicon Carbide (SiC) MOSFET from Wolfspeed, rated for 1200V drain-source voltage and packaged in a TO-263-7L XL. It features an optimized package with a separate Kelvin driver source pin to minimize switching noise and gate ringing. The device offers a typical on-resistance of 32mΩ at 25°C and supports continuous drain currents up to 68A. Designed for high-speed switching applications, it provides low output capacitance and fast intrinsic diode characteristics.

Feature Summary

  • Third-generation SiC technology with optimized packaging
  • Separate Kelvin driver source pin for reduced noise
  • High blocking voltage combined with low on-resistance
  • Fast intrinsic diode with low reverse recovery charge

Applications

  • Solar inverters
  • EV motor drive systems
  • High voltage DC/DC converters
  • Switched mode power supplies
  • Load switch circuits

Procurement Notes

Verify the specific J1 suffix against official documentation to confirm the TO-263-7L XL package configuration. Ensure compatibility with recommended operating conditions, including the specified 15V turn-on gate voltage and thermal management requirements for junction temperatures up to 175°C. Confirm RoHS compliance status through current manufacturer declarations.

Selection Notes

Select this component for designs requiring high efficiency and power density in medium-to-high power applications. The separate driver source pin facilitates cleaner gate drive loops compared to standard packages. Evaluate thermal resistance and safe operating area curves to ensure adequate heat dissipation for the intended load current and switching frequency.

Part Context

This part belongs to the C3MTM family of silicon carbide power devices. It represents Wolfspeed's advancement in SiC MOSFET technology, offering improved performance over previous generations. The device is designed to replace traditional silicon IGBTs or MOSFETs in applications demanding higher switching frequencies and lower conduction losses.

Replacement Considerations

Direct replacements within the same family include C3M0032120D and C3M0032120K, which share similar electrical ratings but differ in package type. Verify pinout compatibility and thermal interface requirements when substituting between different package variants.

FAQ

What is the purpose of the separate source pin?

Pin 2 serves as a Kelvin driver source connection, separating the high-current power source path from the gate drive return path to minimize ground bounce and switching noise.

What is the maximum operating junction temperature?

The device is rated for an operating junction temperature range of -40°C to +175°C.

C3M0032120J1C3M0032120J1
$30.06
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