C3M0032120K1

$17.98

Description：MOSFET N-CH 1200V 69A TO247-4L
Series：-
Mfr：Wolfspeed, Inc.
Package：Bulk

SKU:4de984d72715 Category: Single FETs, MOSFETs Brand: Wolfspeed, Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 1200V 69A TO247-4L
Series：-
Mfr：Wolfspeed, Inc.
Package：Bulk
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：1200 V
Current - Continuous Drain (Id) @ 25°C：69A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：15V
Rds On (Max) @ Id, Vgs：43mOhm @ 40A, 15V
Vgs(th) (Max) @ Id：3.6V @ 11.5mA
Gate Charge (Qg) (Max) @ Vgs：118 nC @ 15 V
Vgs (Max)：+15V, -4V
Input Capacitance (Ciss) (Max) @ Vds：3357 pF @ 1000 V
FET Feature：-
Power Dissipation (Max)：341W (Tc)
Operating Temperature：-40°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247-4L
Package / Case：TO-247-4

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C3M0032120K1

Overview

The Wolfspeed C3M0032120K is a third-generation silicon carbide (SiC) MOSFET featuring an N-channel enhancement mode configuration. It operates with a drain-source voltage of 1200 V and exhibits a maximum on-resistance of 43 mΩ at 25°C. The device supports a continuous drain current of 69 A and a pulsed drain current of 264 A, housed in a TO-247-4L package. Key electrical parameters include a gate threshold voltage ranging from 1.8 V to 3.6 V, input capacitance of 3357 pF, and reverse transfer capacitance of 8 pF. Thermal characteristics specify a junction-to-case thermal resistance of 0.44 °C/W.

Feature Summary

Optimized package design incorporating a separate driver source pin to minimize gate ringing and switching losses.
High blocking voltage capability combined with low on-resistance for enhanced system efficiency.
Fast intrinsic diode performance characterized by low reverse recovery charge.
Halogen-free and RoHS compliant construction.

Applications

Motor Control
EV Battery Chargers
High Voltage DC/DC Converters

Procurement Notes

Verify the specific ordering suffix 'K' against official documentation to confirm the exact package variant and marking. Ensure compatibility with recommended operational gate voltages and thermal management requirements before procurement. Cross-reference datasheet revision dates to validate parameter accuracy.

Selection Notes

Select this component for high-voltage applications requiring low switching losses and high power density. Evaluate thermal resistance and current derating curves relative to case temperature constraints. Confirm that the TO-247-4L footprint aligns with PCB layout specifications and mounting torque limits.

Part Context

This part belongs to the Wolfspeed C3M series of third-generation SiC MOSFETs. It utilizes Wolfspeed's advanced silicon carbide technology to deliver superior performance compared to traditional silicon devices. The series targets demanding power conversion environments where efficiency and thermal management are critical.

Replacement Considerations

Consult official substitution guides for compatible alternatives within the Wolfspeed portfolio. Verify pinout compatibility and electrical parameter overlaps when considering cross-brand replacements.