C3M0040120D

$23.81

Description：1200V 40MOHM SIC MOSFET
Series：C3M™
Mfr：Wolfspeed, Inc.
Package：Tube

SKU:bc406c8c6f6f Category: Single FETs, MOSFETs Brand: Wolfspeed, Inc.

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Product introduction

Product Detailed Parameters

Description：1200V 40MOHM SIC MOSFET
Series：C3M™
Mfr：Wolfspeed, Inc.
Package：Tube
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：1200 V
Current - Continuous Drain (Id) @ 25°C：66A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：15V
Rds On (Max) @ Id, Vgs：53.5mOhm @ 33.3A, 15V
Vgs(th) (Max) @ Id：3.6V @ 9.5mA
Gate Charge (Qg) (Max) @ Vgs：101 nC @ 15 V
Vgs (Max)：+15V, -4V
Input Capacitance (Ciss) (Max) @ Vds：2900 pF @ 1000 V
FET Feature：-
Power Dissipation (Max)：326W (Tc)
Operating Temperature：-40°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247-3
Package / Case：TO-247-3

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C3M0040120D

Overview

The C3M0040120D is a third-generation silicon carbide (SiC) MOSFET from Wolfspeed, housed in a TO-247-3 package. It features an N-channel enhancement mode design with a drain-source voltage rating of 1200 V and a typical on-resistance of 40 mΩ at 25°C. The device supports a continuous drain current of 66 A and a pulsed drain current of 223 A. Operating junction temperatures range from -40°C to +175°C.

Feature Summary

Third-generation SiC technology providing high blocking voltage combined with low on-resistance for optimized efficiency.
High-speed switching characteristics enabled by low input, output, and reverse transfer capacitances.
Fast intrinsic body diode featuring low reverse recovery charge and peak current.
Halogen-free and RoHS compliant construction.

Applications

Solar inverters
EV motor drive systems
High voltage DC/DC converters
Switched mode power supplies

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct package and marking specifications. Confirm that the component meets all required environmental standards, including RoHS compliance, prior to integration into final designs.

Selection Notes

Select this component for applications requiring high-voltage handling and efficient thermal management. Evaluate the thermal resistance parameters and safe operating area curves to ensure adequate heat dissipation under maximum load conditions and temperature extremes.

Part Context

This discrete power MOSFET belongs to Wolfspeed's C3M series, utilizing advanced silicon carbide semiconductor technology. It is designed to replace traditional silicon devices in high-frequency, high-power applications to reduce system size and improve overall energy conversion efficiency.