C3M0040120J1

$23.81

Description：1200V 40 M SIC MOSFET
Series：C3M™
Mfr：Wolfspeed, Inc.
Package：Tube

SKU:be7cfe647069 Category: Single FETs, MOSFETs Brand: Wolfspeed, Inc.

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Product introduction

Product Detailed Parameters

Description：1200V 40 M SIC MOSFET
Series：C3M™
Mfr：Wolfspeed, Inc.
Package：Tube
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：1200 V
Current - Continuous Drain (Id) @ 25°C：64A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：15V
Rds On (Max) @ Id, Vgs：53.5mOhm @ 33.3A, 15V
Vgs(th) (Max) @ Id：3.6V @ 9.2mA
Gate Charge (Qg) (Max) @ Vgs：94 nC @ 15 V
Vgs (Max)：+15V, -4V
Input Capacitance (Ciss) (Max) @ Vds：2900 pF @ 1000 V
FET Feature：-
Power Dissipation (Max)：272W (Tc)
Operating Temperature：-40°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-263-7
Package / Case：TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

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C3M0040120J1

Overview

The Wolfspeed C3M0040120J1 is a third-generation silicon carbide (SiC) MOSFET in a TO-263-7L XL package. It features a 1200 V drain-source voltage and a maximum on-resistance of 53.5 mΩ at 150 °C. The device supports a continuous drain current of 64 A at 25 °C and 42 A at 100 °C, with a pulsed current rating of 100 A. Key electrical parameters include a gate threshold voltage of 2.7 V typical, input capacitance of 2900 pF, and total gate charge of 94 nC. Thermal characteristics specify a junction-to-case resistance of 0.46 °C/W and an operating junction temperature range from -40 °C to +175 °C.

Feature Summary

Third-generation SiC MOSFET technology optimized for high blocking voltage and low on-resistance.
Package design includes a separate Kelvin driver source pin to minimize gate ringing and switching losses.
Fast intrinsic body diode with low reverse recovery charge for efficient commutation.
Halogen-free and RoHS compliant construction.

Applications

Datacenter and telecom power supplies
EV battery chargers
High voltage DC/DC converters
Energy storage systems
Solar inverters

Procurement Notes

Verify the specific ordering suffix J1 against the manufacturer's official datasheet to confirm the exact package variant and compliance status. Ensure that the procurement documentation matches the Rev. 3 December 2024 release specifications. Confirm that the received components align with the TO-263-7L XL physical dimensions and pinout defined in the package outline drawing.

Selection Notes

Select this component for designs requiring high efficiency and reduced cooling requirements due to its low switching energy and on-resistance. The separate Kelvin source pin facilitates precise gate drive control, making it suitable for high-frequency applications. Evaluate the thermal management strategy based on the 0.46 °C/W junction-to-case resistance to ensure operation within the specified 175 °C junction temperature limit under expected load conditions.

Part Context

This device belongs to Wolfspeed’s C3M series of discrete silicon carbide power MOSFETs. The series utilizes advanced SiC technology to deliver superior performance compared to traditional silicon devices. The C3M0040120J1 specifically targets high-power density applications where minimizing switching losses and maximizing system efficiency are critical design constraints.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Designers should consult Wolfspeed directly or review the official datasheet for any officially recommended alternative devices within the same product family.

FAQ

What is the purpose of the separate Kelvin source pin?

The separate Kelvin source pin (Pin 2) is designed to minimize gate ringing and reduce switching losses by providing a dedicated path for the gate drive return current, distinct from the high-current power source pins.