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Product Detailed Parameters
- Description：WOLFSPEED SIC, MOSFET
- Series：-
- Mfr：Wolfspeed, Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-263-7
- Package / Case：TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
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Overview
The Wolfspeed C3M0040120J2 is a third-generation silicon carbide (SiC) MOSFET in a TO-263-7XL package. It features a 1200 V drain-source voltage and a maximum on-resistance of 53 mΩ at 25°C. The device supports a continuous drain current of 63 A and a pulsed current of 223 A, with power dissipation rated at 294 W. Operating junction temperature ranges from -55°C to +175°C. Key electrical parameters include a gate threshold voltage of 2.7 V typical, total gate charge of 91 nC, and reverse recovery charge of 322 nC.
Feature Summary
- Third-generation SiC technology with optimized package for separate driver source pin
- High blocking voltage combined with low on-resistance
- Fast intrinsic diode with low reverse recovery characteristics
- Halogen-free and RoHS compliant construction
Applications
- Motor Control
- EV Battery Chargers
- High Voltage DC/DC Converters
Procurement Notes
Verify the specific ordering suffix J2 corresponds to the TO-263-7XL package variant. Confirm compliance requirements such as RoHS and REACH status directly with the manufacturer or authorized distributors. Ensure thermal management designs account for the specified junction-to-case thermal resistance and derating curves provided in the datasheet.
Selection Notes
Select this component for high-efficiency power conversion applications requiring robust switching performance. The separate Kelvin source pin aids in minimizing gate ringing and improving switching speed. Consider the thermal resistance and safe operating area when designing for high-current or high-temperature environments.
Part Context
This part belongs to Wolfspeed's third-generation silicon carbide MOSFET portfolio. It utilizes advanced SiC technology to achieve superior performance compared to traditional silicon devices. The TO-263-7XL package provides enhanced thermal dissipation capabilities suitable for compact power electronics designs.
Replacement Considerations
Direct replacements should be sought within the Wolfspeed C3M0040120 series or comparable third-generation SiC MOSFETs with similar voltage, current, and package specifications. Verify pinout compatibility, especially regarding the separate driver source pin configuration.
