C3M0040120K

$22.58

Description：1200V 40MOHM SIC MOSFET
Series：C3M™
Mfr：Wolfspeed, Inc.
Package：Tube

SKU:2936dbead8cf Category: Single FETs, MOSFETs Brand: Wolfspeed, Inc.

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Product introduction

Product Detailed Parameters

Description：1200V 40MOHM SIC MOSFET
Series：C3M™
Mfr：Wolfspeed, Inc.
Package：Tube
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：1200 V
Current - Continuous Drain (Id) @ 25°C：66A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：15V
Rds On (Max) @ Id, Vgs：53.5mOhm @ 33.3A, 15V
Vgs(th) (Max) @ Id：3.6V @ 9.2mA
Gate Charge (Qg) (Max) @ Vgs：99 nC @ 15 V
Vgs (Max)：+15V, -4V
Input Capacitance (Ciss) (Max) @ Vds：2900 pF @ 1000 V
FET Feature：-
Power Dissipation (Max)：326W (Tc)
Operating Temperature：-40°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247-4L
Package / Case：TO-247-4

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C3M0040120K

Overview

The C3M0040120K is a 1200 V, 40 mΩ N-Channel Enhancement Mode Silicon Carbide Power MOSFET from Wolfspeed. It utilizes third-generation SiC technology and is housed in a TO-247-4 package with separate driver source pin. Key electrical parameters include a maximum drain-source voltage of 1200 V, continuous drain current of 66 A at 25°C case temperature, and typical on-resistance of 40 mΩ. The device supports an operating junction temperature range of -40 to +175 °C.

Feature Summary

Third-generation SiC MOSFET technology optimized for high blocking voltage and low on-resistance.
Package design includes a separate driver source pin to minimize switching losses and gate ringing.
Features fast intrinsic diode characteristics with low reverse recovery charge.
Provides high-speed switching capability with low capacitances.

Applications

Solar inverters
EV motor drive
High voltage DC/DC converters
Switched mode power supplies
Load switch

Procurement Notes

Verify the specific revision status (Rev. 03, September 2024) against your Bill of Materials requirements. Confirm that the TO-247-4L package dimensions and recommended solder pad layouts align with your PCB design constraints. Ensure compliance with RoHS and REACh directives if required by your supply chain standards.

Selection Notes

Select this component for applications requiring high efficiency and power density in high-voltage environments. The separate driver source pin facilitates improved thermal management and reduced electromagnetic interference compared to standard three-terminal packages. Evaluate the derating curves for continuous drain current based on your specific case temperature conditions.

Part Context

This discrete MOSFET belongs to Wolfspeed's 1200V Silicon Carbide series, designed to replace traditional silicon devices in high-power systems. It is part of a broader portfolio including WolfPACK modules and other discrete variants, aimed at enhancing system performance in renewable energy and electric mobility sectors.

Replacement Considerations

Public confirmed substitute part numbers are not provided in the datasheet.

FAQ

What is the purpose of the separate driver source pin?

The separate driver source pin (Pin 3) is included to optimize the package, allowing for reduced switching losses and minimized gate ringing during operation.