C3M0040120K1

$13.82

Description：MOSFET N-CH 1200V 57A TO247-4L
Series：-
Mfr：Wolfspeed, Inc.
Package：Bulk

SKU:8b438c88fdd7 Category: Single FETs, MOSFETs Brand: Wolfspeed, Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 1200V 57A TO247-4L
Series：-
Mfr：Wolfspeed, Inc.
Package：Bulk
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：1200 V
Current - Continuous Drain (Id) @ 25°C：57A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：15V
Rds On (Max) @ Id, Vgs：53mOhm @ 31.9A, 15V
Vgs(th) (Max) @ Id：3.8V @ 8.377mA
Gate Charge (Qg) (Max) @ Vgs：94 nC @ 15 V
Vgs (Max)：+19V, -8V
Input Capacitance (Ciss) (Max) @ Vds：2726 pF @ 1000 V
FET Feature：-
Power Dissipation (Max)：242W (Tc)
Operating Temperature：-40°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247-4L
Package / Case：TO-247-4

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C3M0040120K1

Overview

The Wolfspeed C3M0040120K1 is a Silicon Carbide (SiC) Power MOSFET featuring N-Channel Enhancement Mode technology. It operates with a Drain-Source Voltage of 1200 V and a continuous drain current of 57 A at 25°C case temperature. The device exhibits a maximum on-resistance of 70 mΩ at 15 V gate drive and 175°C junction temperature. Key electrical parameters include a total gate charge of 94 nC, input capacitance of 2726 pF, and turn-on delay time of 13 ns. Thermal performance is characterized by a junction-to-case thermal resistance of 0.46 °C/W. The component supports an operating junction temperature range from -40°C to +175°C.

Feature Summary

Optimized package design incorporating a separate driver source pin to minimize parasitic inductance and reduce switching losses.
Lower profile TO-247-4L LP package body that facilitates higher power density and improved system integration.
Fast intrinsic diode with low reverse recovery characteristics, enabling efficient operation in hard-switching applications.
High-speed switching capability supported by low capacitances, which reduces gate ringing and enhances overall system efficiency.

Applications

Motor Control
EV Battery Chargers
High Voltage DC/DC Converters
Solar/ESS Systems
UPS

Procurement Notes

Verify the specific ordering suffix K1 against the manufacturer's official documentation to confirm package variations or testing conditions. Ensure compatibility with recommended gate drive voltages and thermal management requirements for the intended application environment. Cross-reference datasheet revision dates to validate parameter accuracy before finalizing procurement specifications.

Selection Notes

Select this component for high-voltage applications requiring robust switching performance and low conduction losses. Evaluate the thermal resistance and power dissipation limits relative to the expected case temperatures. Consider the gate charge and internal gate resistance when designing the driver circuitry to optimize switching speed and minimize electromagnetic interference.

Part Context

This part belongs to the Wolfspeed C3M series of Silicon Carbide Power MOSFETs. It utilizes third-generation SiC technology designed for high blocking voltage and low on-resistance. The series targets demanding power conversion environments where efficiency and power density are critical constraints.

Replacement Considerations

Direct substitutes within the same family include C3M0016120K1, C3M0021120K1, C3M0032120K1, C3M0075120K1, and C3M0160120K1. Verify electrical parameters such as RDS(on), ID, and Qg when selecting alternatives to ensure system compatibility.