C3M0045075K1

$10.58

Description：SICFET N-CH 750V 42A TO247
Series：-
Mfr：Wolfspeed, Inc.
Package：Bulk

SKU:569912ea1e13 Category: Single FETs, MOSFETs Brand: Wolfspeed, Inc.

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Product introduction

Product Detailed Parameters

Description：SICFET N-CH 750V 42A TO247
Series：-
Mfr：Wolfspeed, Inc.
Package：Bulk
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：750 V
Current - Continuous Drain (Id) @ 25°C：42A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：15V
Rds On (Max) @ Id, Vgs：60mOhm @ 17.6A, 15V
Vgs(th) (Max) @ Id：3.8V @ 4.84mA
Gate Charge (Qg) (Max) @ Vgs：65 nC @ 15 V
Vgs (Max)：-8V, +19V
Input Capacitance (Ciss) (Max) @ Vds：1606 pF @ 500 V
FET Feature：-
Power Dissipation (Max)：139W (Tc)
Operating Temperature：-40°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247-4L
Package / Case：TO-247-4

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C3M0045075K1

Overview

The C3M0045075K1 is a Wolfspeed N-Channel Enhancement Mode Silicon Carbide MOSFET rated for 750V drain-source voltage. It features a low on-resistance of 60mΩ at 25°C and supports a continuous drain current of 42A. The device utilizes a lower profile TO-247-4 package with a separate driver source pin to minimize gate ringing. Key electrical parameters include a maximum gate-source voltage of +19V, a threshold voltage of 2.6V, and a total gate charge of 65nC. It operates within a junction temperature range of -40°C to +175°C.

Feature Summary

Optimized package design featuring a separate driver source pin to reduce switching losses and minimize gate ringing.
High blocking voltage combined with low on-resistance to enhance system efficiency and power density.
Fast intrinsic diode characteristics with low reverse recovery charge (Qrr) for improved performance in hard-switching applications.
Halogen-free and RoHS compliant construction suitable for industrial qualification standards.

Applications

Motor Control
EV Battery Chargers
High Voltage DC/DC Converters
Solar/ESS Systems
Enterprise PSU

Procurement Notes

Verify the specific ordering suffix K1 against the manufacturer's official documentation to ensure correct package variant and compliance status. Confirm that the required thermal management solution accommodates the specified junction-to-case thermal resistance. Ensure gate drive circuits support the recommended operational voltage range of -4V to +15V as detailed in the datasheet specifications.

Selection Notes

Select this component for designs requiring high-voltage silicon carbide performance in standard through-hole packages. The separate driver source pin is critical for minimizing parasitic inductance in high-frequency switching environments. Evaluate the 60mΩ on-resistance against thermal constraints to determine appropriate heat sinking requirements for the target operating current and ambient conditions.

Part Context

This discrete SiC MOSFET belongs to Wolfspeed's industrial-grade product line, leveraging third-generation silicon carbide technology. It is designed to replace traditional silicon IGBTs or MOSFETs in high-efficiency power conversion systems. The component is manufactured using Wolfspeed's proprietary processes to ensure reliability in demanding industrial and automotive-adjacent applications.