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Product Detailed Parameters
- Description：SIC, MOSFET, 60M, 650V, TO-263-7
- Series：C3M™
- Mfr：Wolfspeed, Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss)：650 V
- Current - Continuous Drain (Id) @ 25°C：36A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：15V
- Rds On (Max) @ Id, Vgs：79mOhm @ 13.2A, 15V
- Vgs(th) (Max) @ Id：3.6V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs：46 nC @ 15 V
- Vgs (Max)：+15V, -4V
- Input Capacitance (Ciss) (Max) @ Vds：1020 pF @ 600 V
- FET Feature：-
- Power Dissipation (Max)：136W (Tc)
- Operating Temperature：-40°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-263-7
- Package / Case：TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
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Overview
The C3M0060065J-TR is a third-generation silicon carbide (SiC) MOSFET from Wolfspeed, utilizing C3M technology. It features an N-channel enhancement mode configuration housed in a low-inductance TO-263-7 package with a dedicated Kelvin source pin. Key electrical parameters include a drain-source voltage of 650 V and a maximum on-resistance of 80 mΩ at 175°C. The device supports a continuous drain current of 36 A and operates within a junction temperature range of -40°C to +175°C.
Feature Summary
- Third-generation SiC MOSFET technology providing high blocking voltage and low on-resistance
- Low inductance package design incorporating a separate driver source pin for improved switching performance
- Fast intrinsic body diode characterized by low reverse recovery charge
- High-speed switching capability supported by low parasitic capacitances
Applications
- EV charging systems
- Server power supplies
- Solar PV inverters
- Uninterruptible Power Supplies (UPS)
- DC/DC converters
Procurement Notes
Verify the specific ordering suffix '-TR' against official documentation to confirm reel packaging specifications. Ensure compatibility with recommended gate drive voltages and thermal management requirements for the TO-263-7 package. Confirm RoHS compliance status through manufacturer declarations prior to integration.
Selection Notes
Select this component for applications requiring high system efficiency and increased power density. The low inductance package facilitates easy paralleling and simple driving. Consider the thermal resistance characteristics and operating temperature limits when designing heat dissipation solutions for industrial or automotive environments.
Part Context
This part belongs to the Wolfspeed C3M series of silicon carbide power MOSFETs. The series is designed to replace standard silicon MOSFETs in high-performance power conversion systems. The C3M0060065J variant specifically targets 650V applications, offering optimized switching speeds and reduced cooling requirements compared to legacy technologies.
Replacement Considerations
Direct substitutes are not explicitly listed in the provided datasheet. Evaluate other C3M0060065 variants (e.g., C3M0060065D, C3M0060065K) based on required package type and thermal performance. Verify pinout compatibility and electrical parameter alignment before substitution.
